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INVESTIGATION OF ENERGY BAND DIAGRAM OF ORGANIC ULTRA-THIN FILM BY SIMULTANEOUS MEASUREMENT OF TUNNELING AND DISPLACEMENT CURRENTS

隧道电流和位移电流同时测量研究有机超薄膜能带图

基本信息

批准号：
12650007
负责人：
MAJIMA Yutaka
金额：
$ 2.43万
依托单位：
TOKYO INSTITUTE OF TECHNOLOGY
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (C)
财政年份：
2000
资助国家：
日本
起止时间：
2000 至 2001
项目状态：
已结题

项目摘要

The purpose of this investigation was to clarify the energy band diagram of organic ultra-thin film by simultaneous measurement of tunneling and displacement currents. This investigation has been carried out on the basis of the idea of simultaneous measuring method of tunneling and displacement currents proposed by the investigator. As a first step, the investigator has succeeded to measure the tunneling and displacement currents on semiconductor simultaneously by vibrating the scanning probe to the semiconductor surface The theoretical displacement current versus voltage curve was analyzed and was fitted to the experimental results., The theoretical displacement current curves are in good agreement with the measurement. Then, the investigator has developed the determination methods of local carrier concentration and trapped surface charge density of semiconductor. To clarify the relationship between the conduction current and space charge of organic ultra-thin film, polyimide film was … More spin-coated onto the thermally oxidized silicon substrate. The tunneling and displacement current of polyimide (3 nm in thickness) / SiO2 (1 nm in thickness) / silicon structure have been measured. The space charge density in polyimide film has been determined by displacement current curves. The density of state dependence was estimated by differential tunneling current spectroscopy and was found to be originated to the silicon. These results indicate that the polyimide film act as a insulator with space charges and that the density of states and space charges of conductive ultra-thin organic films can be determined by this method. The results were summarized as follows: (1) Measurement of semiconductor local carrier concentration from displacement current-voltage curves with a scanning vibrating probe. (2) Wave form separation of displacement and tunneling currents using a scanning vibrating probe. (3) Determination of surface space charge density on semiconductor from displacement current-voltage curve using a scanning vibrating probe. (4) Measurements of scanning tunneling spectroscopy of polyimide / SiO2 / silicon structure by using the scanning vibrating probe. Less

本研究的目的是借由同时量测隧穿电流与位移电流，以厘清有机超薄膜的能带图。本研究是根据作者提出的隧道电流和位移电流同时测量方法的思想进行的。作为第一步，研究者通过振动扫描探针到半导体表面，成功地同时测量了半导体上的隧穿电流和位移电流，分析了理论位移电流-电压曲线，并与实验结果进行了拟合。理论位移电流曲线与实测值吻合较好。在此基础上，发展了半导体局域载流子浓度和表面陷阱电荷密度的测定方法。为了阐明有机超薄膜的传导电流与空间电荷之间的关系， ...更多信息旋涂到热氧化的硅衬底上。测量了聚酰亚胺（厚度为3 nm）/ SiO2（厚度为1 nm）/硅结构的隧道电流和位移电流。用位移电流曲线测定了聚酰亚胺薄膜中的空间电荷密度。通过微分隧穿电流谱估计了态密度的依赖性，发现其起源于硅。这些结果表明，聚酰亚胺薄膜是具有空间电荷的绝缘体，用这种方法可以测定导电超薄有机薄膜的态密度和空间电荷。主要研究结果如下：（1）利用扫描振动探针位移电流-电压曲线测量半导体局域载流子浓度。(2)用扫描振动探针分离位移电流和隧穿电流的波形。(3)用扫描振动探针由位移电流-电压曲线测定半导体表面空间电荷密度。(4)用扫描振动探针测量聚酰亚胺/二氧化硅/硅结构的扫描隧道谱。少