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Development of practical fabrication method of photonic crystals and their application to functional photonic devices

Development of practical fabrication method of photonic crystals and their application to functional photonic devices
光子晶体实用制造方法的发展及其在功能光子器件中的应用
批准号:
15360174
负责人:
UTAKA Katsuyuki
金额:
$8.32万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (B)
财政年份:
2003
资助国家:
日本
项目状态:
已结题
起止时间:
2003 至 2005

项目摘要

项目成果

UTAKA Katsuyuki的其他基金

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中文摘要
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英文摘要
The purpose of this research project is to develop practical fabrication method of large-area periodic structures for photonic crystals(PC) with high throughput, in order to avoid the intrinsic drawback of electron-beam exposure, and apply the PCs to actual photonic devices. As a result, we established the fabrication method of uniform two-dimensional(2D) periodic structure with periods of 250-500nm in a large area of 40mm diameter by using interference exposure method. Moreover, not only 2D but 3D PCs were fabricated on this 2D periodic structures, and optically-pumped semiconductor laser was fabricated using these multi-dimensional periodic structures to realizes pulsed laser oscillation caused by distributed feedback mode. Precise achieved results are described below.1) High-throughput fabrication method of homogeneous 2D PC in elliptical large area of 30×4Omm was developed using multi interference exposure method.2) Large coupling coefficient of about 100cm^<-1> of the period struc … More tures was achieved by employing Ar-ion milling, shape unification by HF-etching, and RIE with C1_2 gas.3) Enhancement of emission efficiency in the surface direction by as large as twice. was obtained using surface 2D grating.4) Optically-pumped pulsed oscillation was realized for the InAlGaAs/InAlAs multi-quantum well(MQW) structure with InqaAsP/InP 32-paired distributed Bragg reflector(DBR) under the MQW and surface 2D PC on it.5) Wavelength tuning of the lasing mode was attained by about 2nm rotating the optical pumping direction relative to the PC axis.6) Reflection characteristics of InGaAsP/InP DBR and a-Si/SiO_2 3D PC were analyzed by using Rigorous Coupled Wave Analysis(RCWA). It is found that in the former structure there is no-reflection wavelength range, and in the latter perfect photonic bandgap is obtained with wide wavelength range of about 1000nm.These results achieved through this whole research project contain almost all which was settled as objectives, and we clarified the effectiveness of the interference exposure method the PC semiconductor laser fabricated based on this technology. Less
期刊论文(26)
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会议论文
DTCL-MPCVD装置を用いたSi基板上のカーボンナノチューブにおける間隔の制御
使用 DTCL-MPCVD 设备控制硅衬底上碳纳米管的间距
DOI: --
发表时间: 2004
期刊: 第65回応用物理学会学術講演会(秋季)
影响因子: --
作者: [utaka, et al., Utaka et al., 宇高 他, 宇高 他]
通讯作者: 宇高 他
宇高 他: "DTCL-MPCVD装置におけるナノ周期構造でパターニング処理を行ったSi基板上でのカーボンナノチューブの作製"第51回応用物理学関係連合講演会(春季). 30a-ZX-1 (2004)
Udaka 等人:“使用 DTCL-MPCVD 设备在 Si 基板上制备具有纳米周期结构图案的碳纳米管”第 51 届应用物理协会会议(春季)30a-ZX-1(2004 年)。
DOI: --
发表时间:
期刊:
影响因子: --
作者: []
通讯作者:
DOI: --
发表时间: 2005
期刊: Optics Japan 2005講演論文集
影响因子: --
作者: [中尾正史, 永沼充, 井筒雅之, 他]
通讯作者:
ストライプ加工GaAs(100)基板InAs量子ドット形成の基板方位依存性
条纹 GaAs(100) 衬底上 InAs 量子点形成的衬底取向依赖性
DOI: --
发表时间: 2004
期刊: 第65回応用物理学会学術講演会(秋季)
影响因子: --
作者: [utaka, et al., Utaka et al., 宇高 他]
通讯作者: 宇高 他
23
    Development of ultra-low power consumption polymer three-dimensional optical interconnection switching devices
    • 批准号:
      24360139
    • 项目类别:
      Grant-in-Aid for Scientific Research (B)
    • 资助金额:
      $12.4万
    • 财政年份:
      2012
    • 负责人:
      UTAKA Katsuyuki
    • 依托单位:
    Multi-waveguding type photonic functional devices for WDM systems
    • 批准号:
      09650368
    • 项目类别:
      Grant-in-Aid for Scientific Research (C)
    • 资助金额:
      $2.05万
    • 财政年份:
      1997
    • 负责人:
      UTAKA Katsuyuki
    • 依托单位: