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Development of practical fabrication method of photonic crystals and their application to functional photonic devices

光子晶体实用制造方法的发展及其在功能光子器件中的应用

基本信息

批准号：
15360174
负责人：
UTAKA Katsuyuki
金额：
$ 8.32万
依托单位：
Waseda University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
2003
资助国家：
日本
起止时间：
2003 至 2005
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-15360174/
关键词：
miltiple interference exposure for photonic crystals multi-dimensional periodic structure optically-pumped semiconductor laser InAlGaAs InAlAs MQW RCWA method pulsed oscillation distributed feedback mode 干渉露光多次元ナノ周期構造超小型光機能素子カーボ

项目摘要

The purpose of this research project is to develop practical fabrication method of large-area periodic structures for photonic crystals(PC) with high throughput, in order to avoid the intrinsic drawback of electron-beam exposure, and apply the PCs to actual photonic devices. As a result, we established the fabrication method of uniform two-dimensional(2D) periodic structure with periods of 250-500nm in a large area of 40mm diameter by using interference exposure method. Moreover, not only 2D but 3D PCs were fabricated on this 2D periodic structures, and optically-pumped semiconductor laser was fabricated using these multi-dimensional periodic structures to realizes pulsed laser oscillation caused by distributed feedback mode. Precise achieved results are described below.1) High-throughput fabrication method of homogeneous 2D PC in elliptical large area of 30×4Omm was developed using multi interference exposure method.2) Large coupling coefficient of about 100cm^<-1> of the period struc … More tures was achieved by employing Ar-ion milling, shape unification by HF-etching, and RIE with C1_2 gas.3) Enhancement of emission efficiency in the surface direction by as large as twice. was obtained using surface 2D grating.4) Optically-pumped pulsed oscillation was realized for the InAlGaAs/InAlAs multi-quantum well(MQW) structure with InqaAsP/InP 32-paired distributed Bragg reflector(DBR) under the MQW and surface 2D PC on it.5) Wavelength tuning of the lasing mode was attained by about 2nm rotating the optical pumping direction relative to the PC axis.6) Reflection characteristics of InGaAsP/InP DBR and a-Si/SiO_2 3D PC were analyzed by using Rigorous Coupled Wave Analysis(RCWA). It is found that in the former structure there is no-reflection wavelength range, and in the latter perfect photonic bandgap is obtained with wide wavelength range of about 1000nm.These results achieved through this whole research project contain almost all which was settled as objectives, and we clarified the effectiveness of the interference exposure method the PC semiconductor laser fabricated based on this technology. Less

本研究的目的是发展一种实用的大面积周期性光子晶体结构的制作方法，以避免电子束曝光的固有缺陷，并将其应用于实际的光子器件中。在此基础上，建立了利用干涉曝光法在直径为40 mm的大面积上制作周期为250- 500 nm的均匀二维周期结构的方法。在二维周期结构上制作了二维和三维光子晶体，并利用这些多维周期结构制作了光泵半导体激光器，实现了分布反馈模式的脉冲激光振荡。1）采用多次干涉曝光技术，成功地制备出了30× 40 mm椭圆大面积均匀二维光子晶体，并获得了高产量的二维光子晶体; 2）获得了耦合系数约为100cm ~ 2的<-1>周期结构; 3）获得了高质量的二维光子晶体，并获得了高精度的二维光子晶体。 ...更多信息采用Ar离子铣削、HF刻蚀和C1_2气体反应离子刻蚀等方法实现了结构的均匀化。3）在表面方向上的发射效率提高了两倍。4）在InAlGaAs/InAlAs多量子阱（MQW）结构下采用InqaAsP/InP 32对分布布拉格反射器（DBR），在其上采用表面二维光子晶体，实现了光泵浦的脉冲振荡; 5）通过相对光子晶体轴旋转光泵浦方向约2nm，实现了激光模式的波长调谐; 6）InGaAsP/InAlAs多量子阱（MQW）结构的反射特性用严格耦合波分析（RCWA）对InP DBR和a-Si/SiO_2三维光子晶体进行了分析。结果表明，前一种结构在波长范围内没有反射，后一种结构在波长范围内获得了理想的光子带隙，其波长范围约为1000 nm。少