Development of practical fabrication method of photonic crystals and their application to functional photonic devices

本课题的研究目的是为了避免电子束暴露的固有缺点，开发高通量光子晶体（PC）的大面积周期结构的实用制造方法，并将PC应用于实际的光子器件。因此，我们利用干涉曝光法在直径为40mm的大面积上建立了周期为250-500nm的均匀二维（2D）周期结构的制备方法。在二维周期结构上制备了二维和三维pc，利用这些多维周期结构制备了光泵浦半导体激光器，实现了由分布反馈模式引起的脉冲激光振荡。精确取得的结果如下所述。1)采用多干涉曝光法，建立了30×4Omm椭圆大面积均匀二维PC的高通量制备方法。2)周期结构的耦合系数大，约为100cm^<-1>，采用ar离子铣削、hf刻蚀统一形状、c12气体RIE等方法可获得更大的耦合系数。3)表面方向的发射效率提高了2倍。采用平面二维光栅得到。4)利用InqaAsP/InP 32对分布式Bragg反射器（DBR）和表面二维PC，实现了InAlGaAs/InAlAs多量子阱（MQW）结构的光抽运脉冲振荡。5)将光泵浦方向相对于PC轴旋转约2nm，实现了激光模式的波长调谐。6)采用严格耦合波分析（RCWA）分析了InGaAsP/InP DBR和a-Si/SiO_2三维PC的反射特性。研究发现，前者结构无反射波长范围，后者结构获得了完美的光子带隙，波长范围约为1000nm。通过整个项目的研究，所获得的结果几乎包含了所有确定的目标，并明确了基于该技术制作PC半导体激光器的干涉曝光方法的有效性。少

The purpose of this research project is to develop practical fabrication method of large-area periodic structures for photonic crystals(PC) with high throughput, in order to avoid the intrinsic drawback of electron-beam exposure, and apply the PCs to actual photonic devices. As a result, we established the fabrication method of uniform two-dimensional(2D) periodic structure with periods of 250-500nm in a large area of 40mm diameter by using interference exposure method. Moreover, not only 2D but 3D PCs were fabricated on this 2D periodic structures, and optically-pumped semiconductor laser was fabricated using these multi-dimensional periodic structures to realizes pulsed laser oscillation caused by distributed feedback mode. Precise achieved results are described below.1) High-throughput fabrication method of homogeneous 2D PC in elliptical large area of 30×4Omm was developed using multi interference exposure method.2) Large coupling coefficient of about 100cm^<-1> of the period struc … More tures was achieved by employing Ar-ion milling, shape unification by HF-etching, and RIE with C1_2 gas.3) Enhancement of emission efficiency in the surface direction by as large as twice. was obtained using surface 2D grating.4) Optically-pumped pulsed oscillation was realized for the InAlGaAs/InAlAs multi-quantum well(MQW) structure with InqaAsP/InP 32-paired distributed Bragg reflector(DBR) under the MQW and surface 2D PC on it.5) Wavelength tuning of the lasing mode was attained by about 2nm rotating the optical pumping direction relative to the PC axis.6) Reflection characteristics of InGaAsP/InP DBR and a-Si/SiO_2 3D PC were analyzed by using Rigorous Coupled Wave Analysis(RCWA). It is found that in the former structure there is no-reflection wavelength range, and in the latter perfect photonic bandgap is obtained with wide wavelength range of about 1000nm.These results achieved through this whole research project contain almost all which was settled as objectives, and we clarified the effectiveness of the interference exposure method the PC semiconductor laser fabricated based on this technology. Less