High-performance of Superconducting Tunnel Junction for Terahertz Imaging

用于太赫兹成像的高性能超导隧道结

• 批准号: 15360168
• 负责人: MOROHASHI Shinichi
• 金额: $ 9.28万
• 依托单位: Yamaguchi University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 2003
• 资助国家: 日本
• 起止时间: 2003 至 2005
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-15360168/
• 关键词: Superconducting tunneling junction; Terahertz detector; Josephson junction; テラヘルツ光; マグネトロンスパツタ; 電子ビーム励起プラズマ; トンネルバリア; Nb; Al-AlOx-Al; Nb接合; スパッタ; ニオブ; タンタル

A Nb/Al-AlOx-Al/Nb superconducting tunnel junction is expected as a highly sensitive detector for Terahertz imaging. In the use of a highly sensitive detector, it is necessary to reduce the sub-gap leakage current to the limit indicated in the BCS theory. For obtaining the junction with small sub-gap leakage current, we take a new approach, that is, a electron-beam excited sputtering technique, for fabricating the junction consisted of Nb layer, Al layer and tunneling barrier. We studied the deposition conditions for both Nb and Al layers, and the etching condition for Al layer using this system. The transition temperature of the Nb layer and the residual resistance ratio have indicated 9.3 K and more than 3. Fabricated Nb/AlOx-Al/Nb Josephson junction has exhibited SIS characteristics with the gap structure.

Nb/Al-AlOx-Al/Nb超导隧道结有望成为太赫兹成像的高灵敏探测器。在高灵敏度探测器的使用中，有必要将子间隙漏电流减小到BCS理论所指示的极限。为了获得亚带隙漏电流小的结，我们采用了一种新的方法，即电子束激励溅射技术，制备了由Nb层、Al层和隧穿势垒组成的结。我们研究了Nb和Al层的沉积条件，以及使用该系统对Al层的蚀刻条件。Nb层的转变温度和剩余电阻率分别为9.3K和3。制备的Nb/AlOx-Al/NbJosephson结具有带差距结构的SIS特性。

项目成果

New Selective Anodization Process for Nb Josephson Junction with AlOx Barrier

具有 AlOx 阻挡层的 Nb 约瑟夫森结的新型选择性阳极氧化工艺

• 发表时间: 2005
• 期刊: 2004IEEE TRANSACTIONS ON Applied Superconductivity vol.15
• 作者: Shin'ichi Morohashi;Shin'ichi Morohashi;Shin'ichi Morohashi;Shin'ichi Morohashi;Shin'ichi Morohashi;Shin'ichi Morohashi;Shin'ichi Morohashi;Shin'ichi Morohashi
• 通讯作者: Shin'ichi Morohashi

Sub-gap Leakage Current of Nb/Al-AlOx-Al/Nb Josephson Junction Fabricated using Facing Target Sputtering

面向靶溅射制备 Nb/Al-AlOx-Al/Nb 约瑟夫森结的亚间隙漏电流

• 发表时间: 2007
• 期刊: PHYSICA C (掲載予定)
• 作者: Shin'ichi Morohashi

Characteristics of Nb/Al-AlOx-Al/Nb Josephson Junction using Facing Target Sputtering

采用面向靶溅射的 Nb/Al-AlOx-Al/Nb 约瑟夫森结的特性

• 发表时间: 2006
• 期刊: Journal of Physics (掲載決定)
• 作者: Shin'ichi Morohashi;Shin'ichi Morohashi;Shin'ichi Morohashi;Shin'ichi Morohashi;Shin'ichi Morohashi
• 通讯作者: Shin'ichi Morohashi

Characteristics of Nb/AlOx-Al/Nb Josephson Junctions Fabricated using Facing Target Sputtering

使用面向靶溅射制造的 Nb/AlOx-Al/Nb 约瑟夫森结的特性

• 发表时间: 2004
• 期刊: Transactions of the Materials Research Society of Japan vol.29
• 作者: Shin'ichi Morohashi;Shin'ichi Morohashi;Shin'ichi Morohashi;Shin'ichi Morohashi;Shin'ichi Morohashi;Shin'ichi Morohashi;Shin'ichi Morohashi;Shin'ichi Morohashi;Shin'ichi Morohashi;Shin'ichi Morohashi;Shin'ichi Morohashi;Shin'ichi Morohashi;諸橋 信一;Shin'ichi Morohashi
• 通讯作者: Shin'ichi Morohashi

Characteristics of Nb/AlOx-Al/Nb Josephson Junctions Fabric ated using Facing Target Sputtering

面靶溅射 Nb/AlOx-Al/Nb 约瑟夫森结织物的特性

• 发表时间: 2004
• 期刊: Transactions of the Materials Research Society of Japan 29
• 作者: Shin'ichi Morohashi;Shin'ichi Morohashi;Shin'ichi Morohashi;Shin'ichi Morohashi;Shin'ichi Morohashi;Shin'ichi Morohashi;Shin'ichi Morohashi;Shin'ichi Morohashi;Shin'ichi Morohashi;Shin'ichi Morohashi;Shin'ichi Morohashi;Shin'ichi Morohashi
• 通讯作者: Shin'ichi Morohashi