Evaluation of Magnetic-Field Induced Shape Memory Effect in Ferromagnetic Shape Memory Alloy Films and its Mechanism

铁磁形状记忆合金薄膜磁场诱导形状记忆效应评价及其机理

• 批准号: 16360340
• 负责人: OHTSUKA Makoto
• 金额: $ 9.47万
• 依托单位: Tohoku University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 2004
• 资助国家: 日本
• 起止时间: 2004 至 2006
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-16360340/
• 关键词: ferromagnetic shape memory alloy; sputtered film; martensitic transformation; Curie temperature; mechanical property; magnetic-field induced phase transformation; magnetic-field induced shape memory effect; constraint aging treatment; マルテンサイト変換

Ferromagnetic shape memory alloy is a multifunctional material with ferromagnetism and shape memory effect (SME), and is expected as a magnetic-field (MF) induced actuator material. The MF induced SME will enable the quick response and remote control. In the present study, the relation between the composition and SME was investigated for the Ni_2MnGa films. The films with various compositions were constraint-aged to make the two-way SME. The martensitic transformation (MT) temperature was higher than RT and lower than the Curie temperature (Tc) for the films. The mechanical properties are very important in the practical use. The effects of temperature and MF on mechanical properties of the films have been also investigated. Furthermore, the Fe addition as a ferromagnetic metal in the alloy will be effective for the improvement of magnetic properties and MF induced SME. The structure and SME of Fe-added films were investigated under the MF.The reversible two-way SME by the thermal change was confirmed for the all constraint-aged films through the MT and its reversion. The two-way SME by the MF up to 5 T was observed around the MT temperature on cooling for the constraint-aged film with the large gradient and the small thermal hysteresis in the strain-temperature curve. The MT temperatures decrease with increasing Fe content, while the Tc increases. The two-way SME by thermal change was also observed for the Fe-added films. The MF induced MT for the Fe-added film was evaluated by an XRD apparatus in high MF up to 5 T. It was confirmed the martensitic phase was stabilized by the MF. Furthermore, the MF induced SME for the Fe-added films was observed by the inducting the MT with MF around MT temperature on cooling. The strain change by the low MF of 1 T became large for the Fe added films.

铁磁形状记忆合金是一种具有铁磁性和形状记忆效应的多功能材料，有望作为磁场感应致动器材料。MF诱导的SME将使快速响应和远程控制成为可能。本文研究了Ni_2MnGa薄膜的成分与SME的关系。对不同组成的薄膜进行约束时效处理，制备双向SME。薄膜的马氏体相变温度高于室温，低于居里温度。其力学性能在实际应用中非常重要。研究了温度和磁场对薄膜力学性能的影响。此外，Fe作为铁磁金属添加在合金中将是有效的磁性能和MF诱导SME的改善。在磁场作用下研究了Fe掺杂薄膜的结构和形状记忆效应，通过热处理及其反转证实了所有约束时效薄膜都具有可逆的热变化双向形状记忆效应。通过MF高达5 T的双向SME被观察到的MT温度附近的冷却的约束时效膜的大梯度和小的热滞后的应变-温度曲线。随着Fe含量的增加，MT温度降低，而Tc增加。还观察到添加Fe的膜的双向热变化的SME。通过XRD装置在高达5 T的高MF下评估添加Fe的膜的MF诱导的MT。结果表明，磁场对马氏体相有稳定作用。此外，通过在冷却时在MT温度附近用MF诱导MT，观察到添加Fe的薄膜的MF诱导SME。由1 T的低MF引起的应变变化对于添加Fe的膜变得大。

项目成果

Martensitic transformation and shape memory effect under magnetic field for Ni2MnGa sputtered films containing iron

• DOI: 10.1016/j.msea.2006.11.187
• 发表时间: 2008-05
• 期刊: Materials Science and Engineering A-structural Materials Properties Microstructure and Processing
• 影响因子: 6.4
• 作者: M. Ohtsuka;H. Katsuyama;M. Matsumoto;T. Takagi;K. Itagaki

Magnetic-field induced two-way shape memory effect of ferromagnetic Ni2MnGa sputtered films

• DOI: 10.2320/matertrans.47.625
• 发表时间: 2006-03-01
• 期刊: MATERIALS TRANSACTIONS
• 影响因子: 1.2
• 作者: Ohtsuka, Makoto;Konno, Yuya;Itagaki, Kimio
• 通讯作者: Itagaki, Kimio

Effect of Iron and Cobalt Addition on Magnetic and Shape Memory Properties of Ni_2MnGa Sputtered Films

添加铁和钴对Ni_2MnGa溅射薄膜磁性能和形状记忆性能的影响

• 发表时间: 2006
• 期刊: Materials Science and Engineering A Vol.438-440
• 作者: S.Ohnumra;H.Nagura;T.Iwasa;H.Fujimori;T.Masumoto;Makoto Ohtsuka et al.
• 通讯作者: Makoto Ohtsuka et al.

Effect of Iron and Cobalt Addition on Magnetic and Shape Memory Properties of Ni_2MnGa Sputtered Films.

添加铁和钴对Ni_2MnGa溅射薄膜磁性能和形状记忆性能的影响。

• 发表时间: 2006
• 期刊: Materials Science and Engineering A Vol.438-440
• 作者: S.Ohnuma;T.Iwasa;H.Fujimori;T.Masumoto;H.Nagura;M.Yamaguchi;Makoto Ohtsuka et al.
• 通讯作者: Makoto Ohtsuka et al.