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Study on the Fabrication of Ferroelectric Ultrathin Films and Nanostructures by MOCVD and Their Size Effects

Study on the Fabrication of Ferroelectric Ultrathin Films and Nanostructures by MOCVD and Their Size Effects
MOCVD铁电超薄膜和纳米结构的制备及其尺寸效应研究
批准号:
17360144
负责人:
SHIMIZU Masaru
金额:
$4.54万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (B)
财政年份:
2005
资助国家:
日本
项目状态:
已结题
起止时间:
2005 至 2006

项目摘要

项目成果

SHIMIZU Masaru的其他基金

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中文摘要
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英文摘要
In order to investigate the size effect in ferroelectric thin films and nanoisland structures, PbTiO_3 ultrathin films and nanosilands were fabricated by MOCVD and their structureal nature and ferroelectric properties were studied.1) Epitaxial PbTiO_3 ultrathin films with thicknesses of 10-0.9nm were successfully grown on SrRuO_3/SrTiO_3 by MOCVD.2) Piezoresponse measurements using Piezoresponse Force Microscopy (PFM) and observation of ferroelectric polarization using scanning nonlinear dielectric microscopy (SNDM) evidently proved the presence of ferroelectricity in PbTiO_3 ultrathin films with a thickness of 1.3nm (3 mono layers (ML)). Ferroelectrcity was not observed in the 0.9nm (2.2 ML) -thick film. In our experiment, critical thickness was 1.3nm.3) PbTiO_3 and PZT nanoislands were successfully fabricated on Pt/SrTiO_3 substrates by self-assembly using MOCVD. Three types of islands (pyramidal-shaped, triangular-prism-shaped and square-shaped islands) were grown on Pt/SrTiO_3(111), (110) and (001), respectively.4) PFM measurement proved the presence of ferroelectrcity in the PbTiO_3 nanoisland with a width of 27nm and a height of 1.2nm.5) Phase transition temperatures of PbTiO_3 nanoislands on Pt/SrTiO_3(111) and (110) were measured by Raman spectroscopy. From Raman measurement, it was fond that phase transition temperatures in pyramidal-shaped islands and triangular-prism-shaped islands decreased as island size decreased.6) Crystal structure of the nanosiland on Pt/SrTiO_3(111) was investigated using Synchrotron X-ray diffraction. As island size decreased, the c-axis lattice constant decreased at sizes smaller than 100nm though the a-axis lattice constant did not changed.7) Nano-sized Au dots were successfully fabricated by self-assembly. Using these Au nanodots as a top electrode, I-V characteristics of PbTiO_3 nanosilands on Pt/SrTiO_3 were measured.
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Microstructure and Ferroelectric Properties of Ultrathin PbTiO_3 Films by MOCVD
MOCVD超薄PbTiO_3薄膜的微观结构和铁电性能
DOI: --
发表时间: 2006
期刊: Materials Research Society Symposium Proceedings 902E
影响因子: --
作者: [H.Fujisawa et al., H.Fujisawa et al., H.Fujisawa et al., 清水 勝 他, Hironori Fujisawa]
通讯作者: Hironori Fujisawa
DOI: --
发表时间: 2007
期刊: Ceramics Japan 42
影响因子: --
作者: [Eiji Higurashi, Yuichiro Tokuda, Masatake Akaike, and Tadatomo Suga, 清水 勝, M.Shimizu]
通讯作者: M.Shimizu
Fabrication of Self-Assembled Au Nanodots and Their Applications to Ferrolelectric Nanocapacitors
自组装金纳米点的制备及其在铁电纳米电容器中的应用
DOI: --
发表时间: 2006
期刊: Jpn. J. Appl. Phys. 45
影响因子: --
作者: [Eiji Higurashi, Yuichiro Tokuda, Masatake Akaike, and Tadatomo Suga, 清水 勝, M.Shimizu, H.Fujisawa et al., 清水 勝, H.Fujisawa, H.Fujisawa, H.Fujisawa, H.Fujisawa et al.]
通讯作者: H.Fujisawa et al.
Fabrication of Self-Assembled Au Nanodots and Their Applications to Ferroelectric Nanocapacitors
自组装金纳米点的制备及其在铁电纳米电容器中的应用
DOI: --
发表时间: 2006
期刊: Jpn. J. Appl. Phys. 45
影响因子: --
作者: [Eiji Higurashi, Yuichiro Tokuda, Masatake Akaike, and Tadatomo Suga, 清水 勝, M.Shimizu, H.Fujisawa et al., 清水 勝, H.Fujisawa]
通讯作者: H.Fujisawa
13
    FABRICATION OF FERROELCTRIC ONE-DIMENSIONAL NANOSTRUCTURES AND CREATION OF FUNCTIONS
    • 批准号:
      22360130
    • 项目类别:
      Grant-in-Aid for Scientific Research (B)
    • 资助金额:
      $8.57万
    • 财政年份:
      2010
    • 负责人:
      SHIMIZU Masaru
    • 依托单位:
    Low-Temperature Growth of Ferroelectric and Electrode Thin Films by MOCVD and Their Application to Three-Dimensional High Density Memories
    • 批准号:
      13555097
    • 项目类别:
      Grant-in-Aid for Scientific Research (B)
    • 资助金额:
      $3.33万
    • 财政年份:
      2001
    • 负责人:
      SHIMIZU Masaru
    • 依托单位:
    Study on the Influence of Grain Boundary of Ferroelectric Thin Films on Elelectrical Properties and Its Application to Memory Devices
    • 批准号:
      12450131
    • 项目类别:
      Grant-in-Aid for Scientific Research (B)
    • 资助金额:
      $3.33万
    • 财政年份:
      2000
    • 负责人:
      SHIMIZU Masaru
    • 依托单位:
    Size Effects of Ferrelectric Thin Films and Influences of the Size on the Thin Film Memory Device Properties
    • 批准号:
      09650366
    • 项目类别:
      Grant-in-Aid for Scientific Research (C)
    • 资助金额:
      $1.79万
    • 财政年份:
      1997
    • 负责人:
      SHIMIZU Masaru
    • 依托单位: