Low-Temperature Growth of Ferroelectric and Electrode Thin Films by MOCVD and Their Application to Three-Dimensional High Density Memories

MOCVD铁电体和电极薄膜的低温生长及其在三维高密度存储器中的应用

• 批准号: 13555097
• 负责人: SHIMIZU Masaru
• 金额: $ 3.33万
• 依托单位: Himeji Institute of Technology
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 2001
• 资助国家: 日本
• 起止时间: 2001 至 2002
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-13555097/
• 关键词: low temperature growth; MOCVD; PZT thin film; Ir thin film step coverage; ferroelectric capacitor; three-dimensional capacitor; ferroelectric thin film memory; 強誘電体薄膜メモリ; 低温成長; Ir系電極; PZTキャパシタ; NOCVD法; Pb(Zr, Ti)O_3(PZT)薄膜; 段差被膜性

Our research results obtained in this project are summarized below;1. Pb(Zr,Ti)O_3(PZT) thin films were successfully obtained at 370℃ by MOCVD using PbTiO_3(PTO) seeds.2. Crystalline and ferroelectric properties of PZT thin films were strongly influenced by crystallinity of PTO seeds.3. PZT films grown below Curie Temperature (Tc) has more volume fraction of c-axis-oriented domain than that of films grow at temperatures higher than Tc.4. Ir films with a highly c-axis orientation and mirror like surface were successfully grown at 250-350℃ by MOCVD using a new Ir precursor, Ir(EtCp)(cod). At temperatures lower than 300℃, the incubation tune for Ir films was observed.5. Three-dimensional structured Ir/PZT/Ir capacitors were successfully fabricated at lower than 400℃ solely by MOCVD. PZT and Ir in this structure showed step coverages of higher than 80%.6. We developed the low temperature fabrication technique of PZT capacitors solely by MOCVD and this MOCVD technique proved to be very useful technique for 3D-structure capacitor.

我们在这个项目中获得的研究成果总结如下：1。采用PbTiO_3（PTO）为晶种，在370℃下成功制备了Pb（Zr，Ti）O_3（PZT）薄膜. PTO晶种的结晶度对PZT薄膜的结晶和铁电性能有很大的影响.低于居里温度（Tc）生长的PZT薄膜比在高于Tc的温度下生长的薄膜具有更多的c轴取向畴的体积分数。采用新型Ir前驱体Ir（EtCp）（cod），在250-350℃下用MOCVD方法成功地生长了具有高度c轴取向和镜面结构的Ir薄膜。在低于300℃的温度下，Ir薄膜的孕育期缩短.在低于400℃的温度下，采用MOCVD方法成功制备了Ir/PZT/Ir三维结构电容器。PZT和Ir在这种结构中显示出高于80%的台阶覆盖率。我们开发了一种单独使用MOCVD的PZT电容器的低温制备技术，这种MOCVD技术被证明是非常有用的3D结构电容器的技术。

项目成果

M. Shimizu: "Characterization of PZT Capacitors with Ir Elecuiodes Successively Prepared by MOCVD"Abstract of International Joint Conference on the Application of Ferroelectrics 2002. 133-133 (2002)

M. Shimizu：“通过 MOCVD 成功制备 Ir Elecuiodes 的 PZT 电容器的特性”铁电体应用国际联合会议摘要 2002. 133-133 (2002)

M.Shimizu: "Characterization of PZT Capacitors with Ir Electrodes Successively Prepared by MOCVD"Abstract of International Joint Conference on the Application of Ferroelectrics 2002. 133-133 (2002)

M.Shimizu：“通过 MOCVD 连续制备 Ir 电极的 PZT 电容器的表征”铁电体应用国际联合会议摘要 2002. 133-133 (2002)

M.Shimizu: "Low Temperature Growth of Pb(Zr,Ti)O_3 Thin Films by Two Step MOCVD Using Seeds"Ferroelectrics. (印刷中). (2002)

M.Shimizu：“使用种子进行两步 MOCVD 的 Pb(Zr,Ti)O_3 薄膜的低温生长”（出版中）。

M.Shimizu: "Characterization of PZT capacitors with Ir Electrodes Successfully Prepared by MOCVD"Abs. of Int. Joint Conference on the Applications of Ferroelectrics 2002. 133 (2002)

M.Shimizu：“通过 MOCVD 成功制备具有 Ir 电极的 PZT 电容器的表征”Abs。

M.Shimizu: "Low Temperature Growth of Pb(Zr, Ti)O_3 Thin Films by Two Step MOCVD Using Seeds"Ferroelectrics. 269. 217-222 (2002)

M.Shimizu：“使用种子通过两步 MOCVD 低温生长 Pb(Zr, Ti)O_3 薄膜”铁电体。