Low-Temperature Growth of Ferroelectric and Electrode Thin Films by MOCVD and Their Application to Three-Dimensional High Density Memories

点击翻译按钮获取中文摘要

Our research results obtained in this project are summarized below;1. Pb(Zr,Ti)O_3(PZT) thin films were successfully obtained at 370℃ by MOCVD using PbTiO_3(PTO) seeds.2. Crystalline and ferroelectric properties of PZT thin films were strongly influenced by crystallinity of PTO seeds.3. PZT films grown below Curie Temperature (Tc) has more volume fraction of c-axis-oriented domain than that of films grow at temperatures higher than Tc.4. Ir films with a highly c-axis orientation and mirror like surface were successfully grown at 250-350℃ by MOCVD using a new Ir precursor, Ir(EtCp)(cod). At temperatures lower than 300℃, the incubation tune for Ir films was observed.5. Three-dimensional structured Ir/PZT/Ir capacitors were successfully fabricated at lower than 400℃ solely by MOCVD. PZT and Ir in this structure showed step coverages of higher than 80%.6. We developed the low temperature fabrication technique of PZT capacitors solely by MOCVD and this MOCVD technique proved to be very useful technique for 3D-structure capacitor.