IMPROVEMENT OF METHODS TO PRODUCE REFINED BEAMS OF NEUTRAL FREE RADICALS FOR SELECTIVE GROWTH OF METASTABLE CONDENSED PHASES
用于亚稳态凝聚相选择性生长的精制中性自由基束的生产方法的改进
基本信息
- 批准号:18540395
- 负责人:
- 金额:$ 2.41万
- 依托单位:
- 依托单位国家:日本
- 项目类别:Grant-in-Aid for Scientific Research (C)
- 财政年份:2006
- 资助国家:日本
- 起止时间:2006 至 2007
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
In order to further evolve quantum-functional nano-devices using metastable condensed phases, it has become indispensable in recent years to ingeniously utilize selective surface reactions of neutral free radicals for the device processing. The problem encountered in the precise experimental study of a chemical reaction between a neutral free-radical species and a well-characterized material surface is how to supply a sufficient-flux purified beam of the momentum-controlled neutral free radicals onto the surface. The continuous supply is all the more difficult, although steady-flux continuous beams are generally more useful for thin-film growth application than pulsed ones. In order to overcome this difficulty the investigator has proposed several experimental approaches to produce steady-flux refined beams of neutral free radicals (RBNR). Two of these approaches are photo-deionization of negative ion beams (PDINIB) and photo-dissociation of energetic compound beams (PDECB).In this stu … More dy, firstly, we achieved further enhancement of the rate of neutral free-radical production by improving a trial surface-processing apparatus utilizing RBNR produced by the PDECB and the PDINIB methods. A unique unimolecular-reaction mechanism for the photo-dissociation of the PDECB source compounds was revealed in the course of this study. Furthermore, we realized production of well-collimated hyperthermal beams of various neutral free-radical species.In an application of the PDINIB method to the doping of photo-deionized Cr atoms during the low-temperature epitaxial growth of high-quality (Al, Ga)N by a PDECB-based approach, we found a possibility that the incorporation of the Cr atoms into the growing surface of the diluted magnetic semiconductor (A1, Ga, Cr) N is enhanced by the oblique irradiation. Moreover, we successfully applied the well-collimated neutral beams of atomic Cr to elucidation of the angular-selective surface-reaction mechanism responsible for the epitaxial growth of the desirable metastable condensed phase for spintronics. Less
为了进一步发展使用亚稳态凝聚相的量子功能纳米器件,近年来巧妙地利用中性自由基的选择性表面反应进行器件加工已变得必不可少。在中性自由基物质与充分表征的材料表面之间的化学反应的精确实验研究中遇到的问题是如何将动量控制的中性自由基的足够通量的纯化光束提供到表面上。尽管稳定通量连续光束通常比脉冲光束更适合薄膜生长应用,但连续供应更加困难。为了克服这一困难,研究人员提出了几种实验方法来产生稳定通量的精制中性自由基束(RBNR)。其中两种方法是负离子束光去离子 (PDINIB) 和高能复合束光解离 (PDECB)。 在这项研究中,首先,我们通过改进利用 PDECB 和 PDINIB 方法产生的 RBNR 的试验表面处理装置,进一步提高了中性自由基的产生率。本研究过程中揭示了 PDECB 源化合物光解的独特单分子反应机制。此外,我们实现了各种中性自由基物种的良好准直高温束的产生。在通过基于 PDECB 的方法低温外延生长高质量 (Al, Ga)N 期间,应用 PDINIB 方法掺杂光去离子 Cr 原子,我们发现 Cr 原子并入稀释磁性半导体的生长表面的可能性 (A1,Ga,Cr)N通过倾斜照射而被增强。此外,我们成功地将良好准直的原子 Cr 中性束应用于阐明角度选择性表面反应机制,该机制负责自旋电子学所需亚稳态凝聚相的外延生长。较少的
项目成果
期刊论文数量(0)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
Velocity-dependent threshold behavior of wearless nano-friction
无磨损纳米摩擦的速度相关阈值行为
- DOI:
- 发表时间:2008
- 期刊:
- 影响因子:0
- 作者:Keiji Hayashi;Keiji Hayashi;Keiji Hayashi
- 通讯作者:Keiji Hayashi
Molecular dynamics study of atomistic mechanisms of wearless friction determining threshold sliding velocity
无磨损摩擦原子机制的分子动力学研究确定阈值滑动速度
- DOI:
- 发表时间:2007
- 期刊:
- 影响因子:0
- 作者:Keiji Hayashi;Daisuke Tanaka;Tomoki Maruyama;Harumi Araki;Daisuke Matsumura;Misato Kaneko;Keiji Hayashi;Keiji Hayashi;Keiji Hayashi;Keiji Hayashi
- 通讯作者:Keiji Hayashi
Exploration of the Law of Nano-Friction under the Wearless Condition
无磨损条件下纳米摩擦规律的探索
- DOI:
- 发表时间:2007
- 期刊:
- 影响因子:0
- 作者:Keiji Hayashi;Noriyoshi Omote;Keiji Hayashi;Keiji Hayashi;Keiji Hayashi;Keiji Hayashi;Keiji Hayashi;Keiji Hayashi;Keiji Hayashi;Keiji Hayashi;Keiji Hayashi;Keiji Hayashi;Keiji Hayashi
- 通讯作者:Keiji Hayashi
Contribution of the Lattice Properties to Wearless Sliding Friction
晶格特性对无磨损滑动摩擦的贡献
- DOI:
- 发表时间:2006
- 期刊:
- 影响因子:0
- 作者:Keiji Hayashi;Noriyoshi Omote;Keiji Hayashi;Keiji Hayashi;Keiji Hayashi;Keiji Hayashi
- 通讯作者:Keiji Hayashi
PDECB-based approach to radical-beam epitaxy of high-quality cubic GaN and AIN
基于 PDECB 的高质量立方 GaN 和 AIN 自由基束外延方法
- DOI:
- 发表时间:2008
- 期刊:
- 影响因子:0
- 作者:Keiji Hayashi
- 通讯作者:Keiji Hayashi
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HAYASHI Keiji其他文献
HAYASHI Keiji的其他文献
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{{ truncateString('HAYASHI Keiji', 18)}}的其他基金
Search for Laws of Dynamic Nano-Friction as Guiding Principles to Design Artificial Materials for NEMS
寻找动态纳米摩擦定律作为设计 NEMS 人造材料的指导原则
- 批准号:
15K13419 - 财政年份:2015
- 资助金额:
$ 2.41万 - 项目类别:
Grant-in-Aid for Challenging Exploratory Research
Development of method for preventing heat stroke using the meal during exercise in the heat
开发利用高温运动时的膳食来预防中暑的方法
- 批准号:
25750339 - 财政年份:2013
- 资助金额:
$ 2.41万 - 项目类别:
Grant-in-Aid for Young Scientists (B)
IMPROVEMENT OF METHODS TO PRODUCE REFINED BEAMS OF NEUTRAL FREE RADICALS FOR SELECTIVE GROWTH OF METASTABLE CONDENSED PHASES
用于亚稳态凝聚相选择性生长的精制中性自由基束的生产方法的改进
- 批准号:
24510127 - 财政年份:2012
- 资助金额:
$ 2.41万 - 项目类别:
Grant-in-Aid for Scientific Research (C)
Elucidation of the mechanism of ventilatory response during exercise in the heat
阐明高温运动时通气反应的机制
- 批准号:
22700667 - 财政年份:2010
- 资助金额:
$ 2.41万 - 项目类别:
Grant-in-Aid for Young Scientists (B)
DEVELOPMENT OF METHODS TO PRODUCE REFINED BEAMS OF NEUTRAL FREE RADICALS FOR SELECTIVE GROWTH OF METASTABLE CONDENSED PHASES
开发用于亚稳态凝聚相选择性生长的精制中性自由基束的方法
- 批准号:
16540361 - 财政年份:2004
- 资助金额:
$ 2.41万 - 项目类别:
Grant-in-Aid for Scientific Research (C)
Development of Methods to Generate Refined Beams of Neutral Free Radicals for Control of Surface Fundamental Processes
开发产生精制中性自由基束以控制表面基本过程的方法
- 批准号:
14540381 - 财政年份:2002
- 资助金额:
$ 2.41万 - 项目类别:
Grant-in-Aid for Scientific Research (C)
Production and Characterization of a Refined Beam of Neutral Free Radicals for Control of Surface Fundamental Processes
用于控制表面基本过程的精制中性自由基束的生产和表征
- 批准号:
10640393 - 财政年份:1998
- 资助金额:
$ 2.41万 - 项目类别:
Grant-in-Aid for Scientific Research (C)
Study of differention inducing factors on the differention of placental cells
分化诱导因子对胎盘细胞分化影响的研究
- 批准号:
03670789 - 财政年份:1991
- 资助金额:
$ 2.41万 - 项目类别:
Grant-in-Aid for General Scientific Research (C)














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