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Study of ZnO based heterostructures towards realizing high-luminous efficiency ultraviolet to blue light-emitting diodes

Study of ZnO based heterostructures towards realizing high-luminous efficiency ultraviolet to blue light-emitting diodes
ZnO基异质结构研究实现高发光效率紫外至蓝光发光二极管
批准号:
18350092
负责人:
OHTOMO Akira
金额:
$10.59万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (B)
财政年份:
2006
资助国家:
日本
项目状态:
已结题
起止时间:
2006 至 2007

项目摘要

项目成果

OHTOMO Akira的其他基金

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中文摘要
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英文摘要
Zinc oxide (ZnO) has been attracting increasing attentions due to their superior properties for making ultraviolet to blue light-emitting diodes (LED) since the first homoepitaxial LED was realized in 2005. Impacts of their performance are expected to span from high-luminous efficiency to low-cost and clean productivity, taking advantages of abundant source and commercially available single-crystalline substrates. This study aims at improvement of electro-luminescence (EL) efficiency of LED fabricated on conducing ZnO substrates, where vertical contact geometry can be utilized being preferable to practical application. Using molecular beam epitaxy technique, we have fabricated double-heterostructures consisting of ZnO well layers sandwiched by p-and n-type MgZnO barrier layers. As a result, highly efficient band-edge EL is realized. Thus, our study paves a way for development of commercial products. It is also an important protocol to search a transparent and metallic material to form … More good Ohmic contact to p-type layer. We find that a conducting polymer having a large work function has good properties as well as applicability for the use of simple spin-coating. Moreover, this polymer is found to be very useful for making Schottky contact to n-type ZnO. Nevertheless, a few technical issues such as proper analysis of hole concentration and improvement of doping efficiency of nitrogen remain to be solved in future. In other viewpoints associated with the present study, some notable achievements can be obtained; (1) observation of quantum Hall effect in MgZnO/ZnO heterostructures (published in Science, one of high-impact journals) (2) epitaxial growth of MgZnO films having record-long photoluminescence lifetime, both of which indicate state of art technology. Over all achievements can be considered remarkable and satisfactory to contents of proposal. Furthermore, basic idea, knowledge and techniques for pursuing next research subject (study of transport properties in oxide semiconductor low-dimensional structures) have been acquired through this study. Less
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会议论文
ワイドギャップ半導体光・電子デバイス
宽禁带半导体光学/电子器件
DOI: --
发表时间: 2006
期刊:
影响因子: --
作者: [高橋, 吉川, 長谷川]
通讯作者: 長谷川
Photo-irresponsive thin-film transistor with Mg_xZn_<1-x>O channel
Mg_xZn_<1-x>O沟道光响应薄膜晶体管
DOI: --
发表时间: 2006
期刊: Jpn.J.Appl.Phys. 45
影响因子: --
作者: [T. Tanaka, M. Hoshino, H. Kato, M. Ehara, N. Yamada, R. Fukuda, H. Nakatsuji, Y. Tamenori, J.R. Harries, G. Prumper, H. Tanaka, K. Ueda, A.Ohtomo]
通讯作者: A.Ohtomo
DOI: 10.1063/1.2193162
发表时间: 2006-05
期刊: Journal of Applied Physics
影响因子: 3.2
作者: [S. Chichibu;T. Onuma;M. Kubota;A. Uedono;T. Sota;A. Tsukazaki;A. Ohtomo;M. Kawasaki]
通讯作者: S. Chichibu;T. Onuma;M. Kubota;A. Uedono;T. Sota;A. Tsukazaki;A. Ohtomo;M. Kawasaki
PEDOT: PSS Schottky contact on protected-c surface of ZnO by silane-coupling agent
PEDOT:通过硅烷偶联剂在 ZnO 保护 c 表面上形成 PSS 肖特基接触
DOI: --
发表时间: 2008
期刊:
影响因子: --
作者: [R. Y. Gunji, M. Nakano, A. Tsukazaki, A. Ohtomo, T. Fukumura, M. Kawasaki]
通讯作者: M. Kawasaki
121
    Development of electroactive materials through the analysis of electronic phase diagrams of epitaxial transition-metal oxides
    • 批准号:
      15H03881
    • 项目类别:
      Grant-in-Aid for Scientific Research (B)
    • 资助金额:
      $11.48万
    • 财政年份:
      2015
    • 负责人:
      OHTOMO Akira
    • 依托单位:
    Synthesis of photochemically active metal oxides having magnetic superstructures
    • 批准号:
      24245035
    • 项目类别:
      Grant-in-Aid for Scientific Research (A)
    • 资助金额:
      $28.95万
    • 财政年份:
      2012
    • 负责人:
      OHTOMO Akira
    • 依托单位:
    A study of quantized properties in transparent oxide microstructures
    • 批准号:
      20685013
    • 项目类别:
      Grant-in-Aid for Young Scientists (A)
    • 资助金额:
      $16.72万
    • 财政年份:
      2008
    • 负责人:
      OHTOMO Akira
    • 依托单位: