Study of ZnO based heterostructures towards realizing high-luminous efficiency ultraviolet to blue light-emitting diodes

ZnO基异质结构研究实现高发光效率紫外至蓝光发光二极管

基本信息

  • 批准号:
    18350092
  • 负责人:
  • 金额:
    $ 10.59万
  • 依托单位:
  • 依托单位国家:
    日本
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
  • 财政年份:
    2006
  • 资助国家:
    日本
  • 起止时间:
    2006 至 2007
  • 项目状态:
    已结题

项目摘要

Zinc oxide (ZnO) has been attracting increasing attentions due to their superior properties for making ultraviolet to blue light-emitting diodes (LED) since the first homoepitaxial LED was realized in 2005. Impacts of their performance are expected to span from high-luminous efficiency to low-cost and clean productivity, taking advantages of abundant source and commercially available single-crystalline substrates. This study aims at improvement of electro-luminescence (EL) efficiency of LED fabricated on conducing ZnO substrates, where vertical contact geometry can be utilized being preferable to practical application. Using molecular beam epitaxy technique, we have fabricated double-heterostructures consisting of ZnO well layers sandwiched by p-and n-type MgZnO barrier layers. As a result, highly efficient band-edge EL is realized. Thus, our study paves a way for development of commercial products. It is also an important protocol to search a transparent and metallic material to form … More good Ohmic contact to p-type layer. We find that a conducting polymer having a large work function has good properties as well as applicability for the use of simple spin-coating. Moreover, this polymer is found to be very useful for making Schottky contact to n-type ZnO. Nevertheless, a few technical issues such as proper analysis of hole concentration and improvement of doping efficiency of nitrogen remain to be solved in future. In other viewpoints associated with the present study, some notable achievements can be obtained; (1) observation of quantum Hall effect in MgZnO/ZnO heterostructures (published in Science, one of high-impact journals) (2) epitaxial growth of MgZnO films having record-long photoluminescence lifetime, both of which indicate state of art technology. Over all achievements can be considered remarkable and satisfactory to contents of proposal. Furthermore, basic idea, knowledge and techniques for pursuing next research subject (study of transport properties in oxide semiconductor low-dimensional structures) have been acquired through this study. Less
自2005年第一个同质外延发光二极管(LED)问世以来,氧化锌(ZnO)因其优异的性能而受到越来越多的关注。其性能的影响预计将从高发光效率到低成本和清洁的生产力,利用丰富的来源和商业上可获得的单晶衬底的优势。本研究旨在提高在导电氧化锌衬底上制备的LED的电致发光效率,这种垂直接触几何结构比实际应用更好地利用了垂直接触几何。利用分子束外延技术,我们制备了由氧化锌势垒层和p型和n型镁氧化锌势垒层组成的双异质结。结果,实现了高效的带边电致发光。因此,我们的研究为商业化产品的开发铺平了道路。寻找一种透明的金属材料来形成…也是一项重要的协议与p型层有更好的欧姆接触。我们发现,具有大功函数的导电聚合物具有良好的性能,并且适用于简单的旋涂。此外,这种聚合物对于使肖特基与n型氧化锌接触非常有用。然而,合理分析空穴浓度和提高氮的掺杂效率等技术问题仍有待于进一步解决。在与本研究相关的其他观点中,可以获得一些值得注意的成果:(1)观察到了在镁锌/氧化锌异质结构中的量子霍尔效应(发表在高影响力的期刊之一《科学》上)(2)外延生长出了具有创纪录的长光致发光寿命的镁锌薄膜,这两项都表明了最新的技术水平。总体而言,取得的成就可以说是显著的和令人满意的,符合建议的内容。为下一步的研究课题(氧化物半导体低维结构中输运性质的研究)提供了基本的思路、知识和技术。较少

项目成果

期刊论文数量(0)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
ワイドギャップ半導体光・電子デバイス
宽禁带半导体光学/电子器件
  • DOI:
  • 发表时间:
    2006
  • 期刊:
  • 影响因子:
    0
  • 作者:
    高橋;吉川;長谷川
  • 通讯作者:
    長谷川
Improvements in quantum efficiency of excitonic emissions in ZnO epilayers by the elimination of point defects
  • DOI:
    10.1063/1.2193162
  • 发表时间:
    2006-05
  • 期刊:
  • 影响因子:
    3.2
  • 作者:
    S. Chichibu;T. Onuma;M. Kubota;A. Uedono;T. Sota;A. Tsukazaki;A. Ohtomo;M. Kawasaki
  • 通讯作者:
    S. Chichibu;T. Onuma;M. Kubota;A. Uedono;T. Sota;A. Tsukazaki;A. Ohtomo;M. Kawasaki
Photo-irresponsive thin-film transistor with Mg_xZn_<1-x>O channel
Mg_xZn_<1-x>O沟道光响应薄膜晶体管
  • DOI:
  • 发表时间:
    2006
  • 期刊:
  • 影响因子:
    0
  • 作者:
    T. Tanaka;M. Hoshino;H. Kato;M. Ehara;N. Yamada;R. Fukuda;H. Nakatsuji;Y. Tamenori;J.R. Harries;G. Prumper;H. Tanaka;K. Ueda;A.Ohtomo
  • 通讯作者:
    A.Ohtomo
Conducting polymer/ZnO Schottky junction toward transparent oxide electronics
面向透明氧化物电子器件的导电聚合物/ZnO肖特基结
  • DOI:
  • 发表时间:
    2008
  • 期刊:
  • 影响因子:
    0
  • 作者:
    M. Nakano;A. Tsukazaki;K. Ueno;R. Y. Gunji;A. Ohtomo;T. Fukumura;M. Kawasaki
  • 通讯作者:
    M. Kawasaki
Characterization of PEDOTTSS / ZnO Schottky junctions and its application to heterostructures
PEDOTTSS/ZnO肖特基结的表征及其在异质结构中的应用
  • DOI:
  • 发表时间:
    2008
  • 期刊:
  • 影响因子:
    0
  • 作者:
    M. Nakano;A. Tsukazaki;R. Y. Gunji;K Ueno;A. Ohtomo;T. Fukumura;H. Yuji;K. Nakahara;M. Kawasaki
  • 通讯作者:
    M. Kawasaki
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OHTOMO Akira其他文献

Enhancement of transparency in epitaxially-grown p-type SnO films by surface-passivation treatment in a Na2S aqueous solution
通过 Na2S 水溶液中的表面钝化处理提高外延生长 p 型 SnO 薄膜的透明度
  • DOI:
    10.35848/1347-4065/ac56fa
  • 发表时间:
    2022
  • 期刊:
  • 影响因子:
    1.5
  • 作者:
    Uchida Suguri;Soma Takuto;Kitamura Miho;Kumigashira HIroshi;OHTOMO Akira
  • 通讯作者:
    OHTOMO Akira

OHTOMO Akira的其他文献

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{{ truncateString('OHTOMO Akira', 18)}}的其他基金

Development of electroactive materials through the analysis of electronic phase diagrams of epitaxial transition-metal oxides
通过分析外延过渡金属氧化物的电子相图开发电活性材料
  • 批准号:
    15H03881
  • 财政年份:
    2015
  • 资助金额:
    $ 10.59万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
Synthesis of photochemically active metal oxides having magnetic superstructures
具有磁性超结构的光化学活性金属氧化物的合成
  • 批准号:
    24245035
  • 财政年份:
    2012
  • 资助金额:
    $ 10.59万
  • 项目类别:
    Grant-in-Aid for Scientific Research (A)
A study of quantized properties in transparent oxide microstructures
透明氧化物微结构的量子化特性研究
  • 批准号:
    20685013
  • 财政年份:
    2008
  • 资助金额:
    $ 10.59万
  • 项目类别:
    Grant-in-Aid for Young Scientists (A)
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