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FABRICATION OF STRUCTURAL CONTROLLED ORGANIC THIN FILM MEMORY

结构控制有机薄膜存储器的制作

基本信息

批准号：
18360015
负责人：
YOSHIDA Yuji
金额：
$ 8.36万
依托单位：
National Institute of Advanced Industrial Science and Technology
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
2006
资助国家：
日本
起止时间：
2006 至 2007
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-18360015/
关键词：
ELECTRICAL AND ELECTRONIC MATERIALS DATA STORAGE NANOMATERIAL

项目摘要

Organic thin film memory devices are investigated because of the advantages of low cost, high density, etc. In this study, we tried to newly develop organic memory with controlling tire thin film structure by molecular arrangement and nano-particle arrangements.First a novel functionalized cellulose derivative has been synthesized for organic memory materials. A thin film device, where the cellulose derivative is sandwiched by two different metals, shows a drastic transition between low- and high-conductivity states upon the forward and backward sweeping of an external electric field. This reversible current transition behavior demonstrates a typical memory characteristic, with the ON/OFF(high and low-conductivity) states exhibiting a current ratio of four orders of magnitude.Furthermore, we investigated a novel memory composed of ordered metal nano particle layers between organic dielectric layers. The advantage of the memory is to control the storage of electric charges by changing the number of metal nano-particles monolayer. The monolayer of metal nano-particles formed at water surface by Langmuir trough and transferred onto the organic layers and/or substrates. The thickness of nano particle layers was controlled by the number of stacking. The memory device composed of ITO/organic layer/metal nano-particle layers/organic layer/Al. As a result, we observed the typical I-V hysteresis curve as a memory effect. The area of hysteresis curve increased with increasing the stacking numbers of nano-particle layers. This indicates the stacking of metal nano particles controlled the amount of storage in organic memory device.

有机薄膜存储器件由于具有低成本、高密度等优点而备受关注。在本研究中，我们试图通过分子排列和纳米粒子排列来控制轮胎薄膜结构，从而开发出新的有机存储器件。一种薄膜器件，其中纤维素衍生物被两种不同的金属夹在中间，当外部电场向前和向后扫描时，显示出低电导率和高电导率状态之间的剧烈转变。这种可逆的电流转变行为表现出典型的记忆特性，开关状态(高电导和低电导)表现出四个数量级的电流比。此外，我们研究了一种由有机介电层之间的有序金属纳米颗粒层组成的新型存储器。该存储器的优点是通过改变金属纳米颗粒单分子层的数量来控制电荷的存储。通过朗缪尔槽在水面形成金属纳米颗粒的单分子膜，并将其转移到有机层和/或基质上。纳米颗粒层的厚度受堆积数量的控制。该存储器件由ITO/有机层/金属纳米颗粒层/有机层/Al组成。结果，我们观察到了典型的I-V滞后曲线作为记忆效应。随着纳米颗粒层数的增加，电滞回线面积增大。这表明金属纳米颗粒的堆积控制了有机存储器件的存储量。