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Fabrication and studies on electronic property and reactivity for monatomic layer of noble metals on single-crystal oxide films

Fabrication and studies on electronic property and reactivity for monatomic layer of noble metals on single-crystal oxide films
单晶氧化物薄膜上贵金属单原子层的制备及其电子性能和反应活性研究
批准号:
19540331
负责人:
MURATA Yoshitada
金额:
$3.0万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (C)
财政年份:
2007
资助国家:
日本
项目状态:
已结题
起止时间:
2007 至 2009

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中文摘要
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英文摘要
Very thin single-crystal oxide layer can be formed on transition metal surfaces. When this layer is used as a substrate, a monatomic layer of noble metal such as platinum and gold is fabricated. Electronic property and reactivity will be studied on this two-dimensional noble metal. Single-crystal SiO_2 film on the (111) surface of Ni was focused in the present study. Although many troubles have happened, a very high pressure phase of SiO_2 will be produced and is expected to exist in the universe.
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Growth of single-crystal SiO2 clusters on Si(001) surface
Si(001)表面单晶SiO2团簇的生长
DOI: --
发表时间: 2009
期刊: Journal of Applied Physics Vol. 105, No. 7
影响因子: --
作者: [Tetsuo Tanemura, Seiichi Sato, Manisha Kundu, Chikashi Tanaka, Yoshitada Murata]
通讯作者: Yoshitada Murata
Si(001)表面に成長したSiO2単結晶クラスター
Si(001)表面生长的SiO2单晶簇
DOI: --
发表时间: 2009
期刊:
影响因子: --
作者: [種村徹雄, M. Kundu, 山田千樫, 村田好正]
通讯作者: 村田好正
白金表面が示す特異性は相対論によってもたらされる
铂表面呈现的奇点是由相对论带来的
DOI: --
发表时间: 2008
期刊: 表面科学 Vol. 29, No. 29, No.5
影响因子: --
作者: [Yu Nakayama, Makoto Sakaguchi, Kentaroh Yoshida, 音賢一, 関谷隆夫, 村田好正]
通讯作者: 村田好正
Growth of single-crystal SiO_2 clusters on Si(001)surface
Si(001)表面单晶SiO_2团簇的生长
DOI: --
发表时间: 2009
期刊: Journal of Applied Physics 105
影响因子: --
作者: [T.Tanemura, Y.Murata, 他]
通讯作者:
Electronic Properties of Singvle-Crystal Oxide Films Fabricated on Metal Surfaces
  • 批准号:
    11440090
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
  • 资助金额:
    $10.18万
  • 财政年份:
    1999
  • 负责人:
    MURATA Yoshitada
  • 依托单位:
Study of the dynamical process for the surface-molecule interaction using laser-induced desorption
  • 批准号:
    08454076
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
  • 资助金额:
    $5.06万
  • 财政年份:
    1996
  • 负责人:
    MURATA Yoshitada
  • 依托单位:
Surface Electronic Excitation and Elementary Process in Reaction
High-resolution depth profiling of surface hydrogen by a resonant nuclear reaction
  • 批准号:
    04555001
  • 项目类别:
    Grant-in-Aid for Developmental Scientific Research (B)
  • 资助金额:
    $13.63万
  • 财政年份:
    1992
  • 负责人:
    MURATA Yoshitada
  • 依托单位:
海外基金