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High-resolution depth profiling of surface hydrogen by a resonant nuclear reaction

High-resolution depth profiling of surface hydrogen by a resonant nuclear reaction
通过共振核反应对表面氢进行高分辨率深度分析
批准号:
04555001
负责人:
MURATA Yoshitada
金额:
$13.63万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Developmental Scientific Research (B)
财政年份:
1992
资助国家:
日本
项目状态:
已结题
起止时间:
1992 至 1994

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中文摘要
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英文摘要
A high-resolution depth-profiling method of hydrogen was developed at the 2C beam line of the new tandem-type Van de Graaph accelerator at the Research Center for Nuclear Science and Technology, University of Tokyo, in aimed at the investigation of hydrogen dynamics at surfaces and interfaces.The experiment was performed in a ultra-high vacuum chamber equipped with LEED and quadrupole mass spectrometer. The resonance nuclear reaction of ^1H (^<15>N,alphagamma) ^<12>C of which resonance width is 1.8KeV was applied to dydrogen detection. A ^<15>N^<2+> ion at an energy of 6.385 MeV was generated from tandem-type Van de Graaph accelerator with an energy spread of 5 keV.The gamma-ray emitted as a result of the nuclear reaction with hydrogen was detected by a Bi_4Ge_4O_<12> scintillator. The gamma-ray yield as a function of the incident energy shows the depth profile of H of the sample. Since the energy loss of a ^<15>N^<2+> ion at 6.385 MeV in Pb is 0.23 KeV/*, the depth resolution estimated from the resonance, Instrumental and Doppler widths is about 40 *. Samples we used are metal overlayr on Si (lll) 7_x7-H and Si (lll) 1_x1-H,which were prepared by exposing the Si (lll) clean surface to atomic hydrogen untill saturation at sample temperatures of 300 and 700 K,respectively, H-Au (001), and Olivine/Aqueous Solution Interface. Atomic hydrogen was produced by introducing H_2 gas through tungsten tube heated at 1800K.We demonstrated that this method is very powerful for high-resolution depth profiling of hydrogen at a surface and interfaces below the surface.
期刊论文(12)
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会议论文
M.Tsunoda: "The behavior of hydrogen on Ag-deposited H/Si(111)and H/W(001)using a resonance nuclear reaction" Proceedings of the 4th International Conference on Formation of Semiconductor Interface.
M.Tsunoda:“氢在Ag沉积的H/Si(111)和H/W(001)上使用共振核反应的行为”第四届半导体界面形成国际会议论文集。
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通讯作者:
K.Fujimoto et al.: "Hydrogen depth profiling using ^1H (^<15>N,αγ)^<12>C Resonant Nuclear Reaction at Olivine/Aqueous solution Interface" Geochemical Journal. 27. 155-162 (1993)
K.Fujimoto等人:“使用^1H(^15N,αγ)^12C在橄榄石/水溶液界面处进行共振核反应进行氢深度分析”地球化学杂志27.155-162(1993)。
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通讯作者:
K.Fukutani: "Interface Hydrogen between a Pb overlayer and H-saturated si (111) studied by a resonant nucleor reaction" Surface Science. 377-379. 1010-1014 (1997)
K.Fukutani:“通过共振核反应研究 Pb 覆盖层和 H 饱和 si (111) 之间的界面氢”表面科学。
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通讯作者:
K.Fukutani: "High-resolution depth analysis hydrogen by a resonance nuclear reaction:a-Si/H/Si(001)" Surface Science. 283. 447-451 (1993)
K.Fukutani:“通过共振核反应进行高分辨率深度分析氢:a-Si/H/Si(001)”表面科学。
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12
    Fabrication and studies on electronic property and reactivity for monatomic layer of noble metals on single-crystal oxide films
    • 批准号:
      19540331
    • 项目类别:
      Grant-in-Aid for Scientific Research (C)
    • 资助金额:
      $3.0万
    • 财政年份:
      2007
    • 负责人:
      MURATA Yoshitada
    • 依托单位:
    Electronic Properties of Singvle-Crystal Oxide Films Fabricated on Metal Surfaces
    • 批准号:
      11440090
    • 项目类别:
      Grant-in-Aid for Scientific Research (B)
    • 资助金额:
      $10.18万
    • 财政年份:
      1999
    • 负责人:
      MURATA Yoshitada
    • 依托单位:
    Study of the dynamical process for the surface-molecule interaction using laser-induced desorption
    • 批准号:
      08454076
    • 项目类别:
      Grant-in-Aid for Scientific Research (B)
    • 资助金额:
      $5.06万
    • 财政年份:
      1996
    • 负责人:
      MURATA Yoshitada
    • 依托单位:
    Surface Electronic Excitation and Elementary Process in Reaction
    海外基金