Electronic structure of superconductive diamond and related materials : Band insulator-metal transition and superconductivity

利用光导光谱技术研究了硼(B)掺杂金刚石及其相关化合物在半导体到金属跃迁过程中的电子结构演变。软x射线角分辨光发射光谱揭示了重b掺杂超导金刚石的价带电子色散。核能级光发射光谱显示了重B和重磷掺杂金刚石掺杂原子的多个化学位点。对于新的超导体CaC_6和掺杂钾的茂烯，分别直接观察到嵌入和掺杂导致的费米能级附近电子结构的演化，为超导机制的深入研究提供了新的思路。

We have investigated evolution of electronic structure across semiconductor to metal transition of boron(B)-doped diamond and its related compounds by using photoemission spectroscopy. Soft x-ray angle-resolved photoemission spectroscopy has revealed valence band electronic dispersions of heavily B-doped superconductive diamond. Core level photoemission spectroscopy has showed multiple chemical sites of dopant atoms for heavily B- and phosphorous-doped diamond. For new superconductors, CaC_6 and potassium doped picene, evolution of electronic structure near the Fermi level due to intercalation and doping, respectively, have been observed directly, which provide insight into the mechanism of the superconductivity.