Development of novel organic transistor materials based on new molecular design utilizing element character

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In order to develop novel organic thin film transistor materials based on new molecular designing utilizing the characteristics of silicon element, we prepared star-burst compounds with an organosilicon core and π-conjugated wings. The thin films were prepared by vacuum deposition or spin coating and their transistor activity was investigated and the relationship between the molecular structures and the activity was demonstrated. We also studied the molecular electrnic states with respect to the spectroscopic analysis and the molecular orbital calculation and found that the transistor activity depends strongly on the degree of σ-π conjugation and stacking of the π-conjugated units.