Accurate measurements of lattice strains and electric conductivity in nanometer-scale areas

本研究旨在揭示纳米尺度区域内晶格应变与电导率之间的相关性。结果如下。(i)本文提出了一种同时测定晶格参数和表征晶格弯曲的参数的方法，空间分辨率为10 nm。(ii)一个基于GUI的软件，在其中实现本算法，已经开发。(iii)本文建立了一个自动化的二维梁扫描和点阵应变分析的图形采集系统。(iv)本文提出了一种用傅里叶迭代相位恢复法从HOLZ摇摆曲线确定三维点阵应变场的方法。(v)发展了一种利用纳米束衍射技术测定异质结界面附近晶格参数的高精度方法。(vi)高压电子显微镜已被用来应用本方法相对较厚的标本，这有较小的影响，由于试样变薄的表面弛豫。(vii)用STM保持器和HOLZ线分析同时测量了I-V曲线和晶格应变。

The present study has been aimed to reveal the correlation between lattice strains and electric conductivities in nanometer-scale areas. The results are the followings. (i) A method to determine lattice parameters and parameters characterizing lattice bending simultaneously with a spatial resolution of 10nm has been developed. (ii) A GUI-based software, in which the present algorithm is implemented, has been developed. (iii) An automated system for the pattern acquisition with a 2D beam-scanning and the lattice-strain analysis has been constructed. (iv) A method to determine the 3D lattice-strain-field from the HOLZ rocking curves using the Fourier iterative phase retrieval method has been developed. (v) A highly precise method to determine lattice parameters at the vicinity of interfaces of hetero-layers using the nano-beam diffraction technique has been developed. (vi) A high-voltage electron microscope has been used to apply the present method to relatively thick specimens, which has less influenced by the surface relaxation due to specimen thinning。(vii) I-V curves and lattice strains have been measured simultaneously by using an STM holder and HOLZ line analysis.