Elucidation of charge transfer at the interface between semiconductor and insulator and mechanism of defect formation

点击翻译按钮获取中文摘要

Native defects existing in the three constituent regions of MOS (Metal Oxide Semiconductor) device, gate insulator, silicon substrate, and their interface, were examined with a first-principles method in order to elucidate their atomistic properties concerned with reliability issues of MOS devices. A Pb center defect in a Si/SiO_2 interface, B_<12> cluster in a Si substrate, oxygen vacancy and hafnium vacancy in HfO_2 were practically investigated and their fundamental characteristics were revealed in detail.