Development of a strain measurement method having nano-scale space resolution using quantum dots

提出了一种改进的InGaAs/GaAs量子点位置估计方法，即在纳米探针扫描过程中使用圆顶探针进行低温（10 K）光致发光（PL）测量。来自单个量子点的精细PL峰随着纳米探针诱导的应变而增强。通过对单个量子点的PL谱随扫描探针位置的变化进行跟踪，直接从扫描结果中得到了部分量子点的位置，这些量子点的PL峰能量在这些位置处达到最大值。

An improvement in the estimation of the location of embedded InGaAs/GaAs quantum dots (QDs) by using a domed-apex probe to perform the low- temperature (10 K) photoluminescence (PL) measurement during a nanoprobe scan was established. Fine PL peak from individual QDs was enhanced with the nanoprobe-induced strain. Tracing the PL emissions of single QD with the movement of the probe position in the scan, the locations of some of observed QDs were obtained directly from the scan results, at where the PL peak energies of those QDs achieved maximum values.