Study on Novel Topologies and Their Implementation of Next-Generation Ultra High-Speed Switching Power Converters

点击翻译按钮获取中文摘要

This study focuses on development of a power converter capable of high-dv/dt switching operation and its peripheral circuit technology, assuming next-generation ultra high-speed switching devices such as SiC-MOSFETs. As a result, a novel topology that drives all switching devices on a common potential level was proposed, and a multi-core transformer based isolated power supply was developed, which reduces common mode noise current through the gate drive circuit down to 1/5.