Application of semiconductor quantum dots with organic thin film on silicon substrates to high conversion-efficiency solar cells
Application of semiconductor quantum dots with organic thin film on silicon substrates to high conversion-efficiency solar cells
批准号:
20560291
负责人:
YAMAGUCHI Koichi
金额:
$3.0万
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (C)
财政年份:
2008
资助国家:
日本
项目状态:
已结题
起止时间:
2008 至 2010
中文摘要
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英文摘要
InAs/GaAs quantum dots (QDs) were fabricated on Ge(001) substrates by molecular beam epitaxy. High-density InAs QDs with 7×1010 cm-2 were successfully obtained by using Sb-containing GaAs buffer layers. Optical absorption of long wavelength light in the InAs QD layers provided additional photocurrent. Organic thin-films on the InAs QD layers played a role for surface passivation. These results are expected for development of solar cells with high conversion efficiency in future.
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(Invited) Self-Formation Control of GaAs/InAs Quantum Dots for Solar Cells with Intermediate Bands
(特邀)中间能带太阳能电池GaAs/InAs量子点的自形成控制
DOI:
--
发表时间:
2010
期刊:
影响因子:
--
作者:
[K.Yamaguchi, N.Tsukiji, S.Sekiguchi, T.Seo, J.Ohta T.Inaji]
通讯作者:
J.Ohta T.Inaji
InAs量子ドット面内超格子構造の積層成長
InAs量子点面内超晶格结构的堆叠生长
DOI:
--
发表时间:
2010
期刊:
影响因子:
--
作者:
[稲次敏彦, 関口修司, 太田潤, 山口浩一]
通讯作者:
山口浩一
InAs量子ドット上の自己形成GaAsナノホールのモンテカルロシミュレーション
InAs量子点上自形成GaAs纳米孔的蒙特卡罗模拟
DOI:
--
发表时间:
2009
期刊:
影响因子:
--
作者:
[関口修司, 山口浩一]
通讯作者:
山口浩一
積層InAs量子ドットの熱処理効果
堆叠式InAs量子点的热处理效果
DOI:
--
发表时间:
2009
期刊:
影响因子:
--
作者:
[廣瀬真幸, 山口浩一]
通讯作者:
山口浩一
自己形成GaAsナノホールを用いたGaSb/GaAs層上近接積層InAs量子ドットの発光特性改善
利用自形成的 GaAs 纳米孔改善紧密堆叠在 GaSb/GaAs 层上的 InAs 量子点的发光性能
DOI:
--
发表时间:
2008
期刊:
影响因子:
--
作者:
[関口修司, 山口浩一]
通讯作者:
山口浩一
共 56 条
A Stady on the Fomation of "Imperial Order"in Colonial Korea
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批准号:15K01900
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项目类别:Grant-in-Aid for Scientific Research (C)
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资助金额:$2.33万
-
财政年份:2015
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负责人:YAMAGUCHI Koichi
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依托单位:
Rule order of people in colony period Korea - Focusing on the trend of the Korean people and the local community -
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批准号:23510335
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项目类别:Grant-in-Aid for Scientific Research (C)
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资助金额:$3.08万
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财政年份:2011
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负责人:YAMAGUCHI Koichi
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依托单位:
The political procedure of "Integration" by Goverment-General of Korea and the regional society in colonial Korea
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批准号:19710207
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项目类别:Grant-in-Aid for Young Scientists (B)
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资助金额:$1.79万
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财政年份:2007
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负责人:YAMAGUCHI Koichi
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依托单位:
Injection and control of spin-polarized electrons into highly uniform semiconductor quantum dots
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批准号:14550294
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项目类别:Grant-in-Aid for Scientific Research (C)
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资助金额:$2.24万
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财政年份:2002
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负责人:YAMAGUCHI Koichi
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依托单位:
A prospective survey of delayd adverse reactions to iodinated nonionic contrast media.
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批准号:06454321
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$2.3万
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财政年份:1994
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负责人:YAMAGUCHI Koichi
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依托单位:
Improvement of Spatial Resolution and Reliability of rCBF Imaging in the Patients of Senile Dementia or Another Neuropsychologic Disease.
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批准号:63480247
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项目类别:Grant-in-Aid for General Scientific Research (B)
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资助金额:$4.22万
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财政年份:1988
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负责人:YAMAGUCHI Koichi
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依托单位:
Fmdamentl alld Cliuical investigation of rCBF Measurement by single Photou Emission CTg (HEADTOME)
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批准号:60480252
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项目类别:Grant-in-Aid for General Scientific Research (B)
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资助金额:$1.79万
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财政年份:1985
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负责人:YAMAGUCHI Koichi
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依托单位:
海外基金