Fabrication of thin-film hydrogen sensors operating at room temperature by photochemical deposition and photochemical doping
Fabrication of thin-film hydrogen sensors operating at room temperature by photochemical deposition and photochemical doping
批准号:
20560323
负责人:
ICHIMURA Masaya
金额:
$2.91万
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (C)
财政年份:
2008
资助国家:
日本
项目状态:
已结题
起止时间:
2008 至 2010
中文摘要
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英文摘要
We fabricated highly sensitive room temperature hydrogen sensors based on SnO_2 films. The films were deposited by the photochemical deposition. The deposition solution contained 10mM of SnSO_4 (pH around 1.4). The solution dropped on the substrate was irradiated with the light. The sample annealed at 200℃ showed current increase by a factor>10^3 within 1 min for 5000 ppm hydrogen at room temperature. The sensitivity and response speed were further improved by UV irradiation using a low-pressure Hg lamp both in vacuum and in air.
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DOI:
10.1016/j.sse.2011.11.024
发表时间:
2012-03-01
期刊:
SOLID-STATE ELECTRONICS
影响因子:
1.7
作者:
[Ao, Dengbaoleer, Ichimura, Masaya]
通讯作者:
Ichimura, Masaya
Properties of Gas Sensors Based on Photochemically Deposited Nanocrystalline SnO_2 Films
光化学沉积纳米晶SnO_2薄膜气体传感器的性能
DOI:
--
发表时间:
2010
期刊:
Phys.Status Solidi C Vol.7
影响因子:
--
作者:
[M.Ichimura, Aodengbaoleer, T.Sueyoshi]
通讯作者:
T.Sueyoshi