Fabrication of thin-film hydrogen sensors operating at room temperature by photochemical deposition and photochemical doping

通过光化学沉积和光化学掺杂制造室温下运行的薄膜氢传感器

• 批准号: 20560323
• 负责人: ICHIMURA Masaya
• 金额: $ 2.91万
• 依托单位: Nagoya Institute of Technology
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 2008
• 资助国家: 日本
• 起止时间: 2008 至 2010
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-20560323/
• 关键词: 水素センサー; 光化学堆積; 酸化スズ; 紫外線照射; 原子間力顕微鏡

We fabricated highly sensitive room temperature hydrogen sensors based on SnO_2 films. The films were deposited by the photochemical deposition. The deposition solution contained 10mM of SnSO_4 (pH around 1.4). The solution dropped on the substrate was irradiated with the light. The sample annealed at 200℃ showed current increase by a factor>10^3 within 1 min for 5000 ppm hydrogen at room temperature. The sensitivity and response speed were further improved by UV irradiation using a low-pressure Hg lamp both in vacuum and in air.

利用SnO_2薄膜制备了高灵敏度的室温氢传感器。采用光化学沉积法沉积薄膜。沉积液中含有10mM的SnSO_4 （pH约为1.4）。滴在基板上的溶液被光照射。在室温下，当氢含量为5000ppm时，样品在200℃退火后，电流在1 min内增加了bbb10 ^3倍。在真空和空气中使用低压汞灯进行紫外照射，进一步提高了灵敏度和响应速度。

项目成果

UV irradiation effects on hydrogen sensors based on SnO2 thin films fabricated by the photochemical deposition

• DOI: 10.1016/j.sse.2011.11.024
• 发表时间: 2012-03-01
• 期刊: SOLID-STATE ELECTRONICS
• 影响因子: 1.7
• 作者: Ao, Dengbaoleer;Ichimura, Masaya
• 通讯作者: Ichimura, Masaya

Properties of Gas Sensors Based on Photochemically Deposited Nanocrystalline SnO_2 Films

光化学沉积纳米晶SnO_2薄膜气体传感器的性能

• 发表时间: 2010
• 期刊: Phys.Status Solidi C Vol.7
• 作者: M.Ichimura;Aodengbaoleer;T.Sueyoshi
• 通讯作者: T.Sueyoshi