Study on properties and functionalization of nonstoichiometric silicon-titanium nitride and oxide

非化学计量硅钛氮化物及氧化物的性能及功能化研究

• 批准号: 20560623
• 负责人: KASUKABE Yoshitaka
• 金额: $ 3.16万
• 依托单位: Tohoku University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 2008
• 资助国家: 日本
• 起止时间: 2008 至 2010
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-20560623/
• 关键词: 不定比化合物; 窒化物; 機能性材料; イオン注入; その場観察; 透過電子顕微鏡; 電子エネルギー損失分光; 分子軌道計算

In order to clarify atomistic growth processes of TiN_y films due to the implantation of nitrogen ions (N_2^+) with 62keV into Ti films, changes of the concentration of H and/or N atoms in Ti films, and of the crystallographic and electronic structures of the films by heating and by nitriding have been investigated by in-situ transmission electron microscope (TEM) equipped with electron energy loss spectroscopy (EELS), with the aid of molecular orbital calculations. By taking into account the bonding interaction of Ti sublattices with ligand N atoms, it is clarified that the TiN_y is epitaxially formed by the N-implantation into the hcp-Ti, through the epitaxial transformation of the hcp-Ti to fcc-Ti sublattice, partially inheriting the atomic arrangement of the hcp-Ti, and accompanying the occupation of O-sites of the transformed fcc-Ti by N atoms.

为了阐明62 keV氮离子（N_2^+）注入Ti膜后TiN_y膜的原子级生长过程，用原位透射电子显微镜（TEM）和电子能量损失谱（EELS）研究了Ti膜中H和/或N原子浓度的变化以及加热和氮化对薄膜晶体结构和电子结构的影响。借助分子轨道计算。考虑到Ti亚晶格与配体N原子的成键相互作用，阐明了N注入hcp-Ti中，通过hcp-Ti向fcc-Ti亚晶格的外延转变，部分继承了hcp-Ti的原子排列，并伴随着N原子占据转变后的fcc-Ti的O位，外延形成了TiN_y。

项目成果

Epitaxial Nitriding Processes of Titanium Thin Films due to N Implantation

氮注入钛薄膜外延氮化工艺

• 发表时间: 2008
• 期刊: JAEA-Review 2008-055
• 作者: Y. Kasukabe;S. Yamamoto and M. Yoshikawa
• 通讯作者: S. Yamamoto and M. Yoshikawa

In-situ Observation of Nitriding Prceesses of Deposited-Ti Thin Films due to Ion Implantation in an Analytical Transmission Electron Microscope.

在分析透射电子显微镜中原位观察离子注入沉积钛薄膜的氮化过程。

• 发表时间: 2011
• 期刊: e-J.Surf.Sci.Nanotech.
• 作者: Y.Kasukabe;Y.Chen;S.Yamamoto;M.Yoshikawa;Y.Fujino
• 通讯作者: Y.Fujino

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主页等

Atomistic nitriding processes of titanium thin films due to nitrogen-implantation

• DOI: 10.1016/j.apsusc.2008.03.191
• 发表时间: 2008-09
• 期刊: Applied Surface Science
• 影响因子: 6.7
• 作者: Y. Kasukabe;S. Nishida;S. Yamamoto;M. Yoshikawa;Y. Fujino

In-situ Observation of Nitriding Processes of Deposited-Ti Thin Films due to Ion Implantation in an Analytical Transmission Electron Microscope

在分析透射电子显微镜中原位观察离子注入沉积钛薄膜的氮化过程

• 发表时间: 2011
• 期刊: e-J. Surf. Sci. Nanotech. 9巻
• 作者: Y.Kasukabe;Y.Chen;S.Yamamoto;M.Yoshikawa;Y.Fujino
• 通讯作者: Y.Fujino