High-Speed Defect Measurement of Next-Generation Semiconductor Wafer Using Active Control of Evanescent Light

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First of all, the experimental apparatus was developed for fundamental verifications in generating and control of standing evanescent illumination, and in super-resolution microscopy based on multiple-image iterative reconstruction. As a result of experiments using scattered light imaging of discrete specimen, basic principles of the proposed method was confirmed. Furthermore, numerical simulations were performed to investigate the relationship between pixel size and resolving power in the proposed microscopic imaging technique. It was found that nano-scale displacements of standing evanescent illumination possibly provided us sub-pixel resolution (sub-pixel spatial sampling). Related works of this research were proposals and efficacy analyses of resolution improvement technique based on active shift of imaging path and wide-field three dimensional structured illumination generation technique using multiple-beam interference.