Temperature-sensitive recruitment of voltage-gated proton channels

点击翻译按钮获取中文摘要

Voltage-gated proton channels (H^+ channels) are highly sensitive to temperature. The temperature-sensitivity of whole-cell H^+ currents consisted of two phases, a high Q_<10> phase over the lower temperature ranges (<～30℃) and a low Q_<10> phase at higher temperatures. We revealed the low Q_<10> phase represented the process of H^+ permeation through the channel pore and the access resistance to the pore, and the high Q_<10> phase, recruitment of active channels in addition to the permeation process. Actin cytoskeletal network and lipid raft structure are suggested to underlie the temperature-sensitive recruitment of H^+ channels.