Analysis of Charging Phenomena on Dielectrics using PEA System and Developing Semi-conductor Pulsed Pressure Signal Sensor
Analysis of Charging Phenomena on Dielectrics using PEA System and Developing Semi-conductor Pulsed Pressure Signal Sensor
批准号:
20760208
负责人:
MIYAKE Hiroaki
金额:
$2.75万
依托单位国家:
日本
项目类别:
Grant-in-Aid for Young Scientists (B)
财政年份:
2008
资助国家:
日本
项目状态:
已结题
起止时间:
2008 至 2009
中文摘要
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英文摘要
This research work is carried out as a development of piezo device using semi-conductor. And our final aim is new developed device will be applied for the surface charging sensor for surface materials for spacecraft. The carried out point are as follows;1: Development of pulsed ultrasonic waves sensor device using PN junction type and MOS type semiconductor.2: Measurement of charge accumulation in surface materials of spacecraft irradiated by an electron and proton which can be used for calibration data of the developed sensor.From our research work, we succeeded to develop a new pulsed ultrasonic waves sensor using semi-conductor. Furthermore, we also succeeded to obtain charge accumulation result in surface materials of spacecraft irradiated by electron and proton. Particularly, around the world, the results of charge distribution under the proton irradiation condition are obtained by us.
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プロトン照射絶縁材料における電荷蓄積特性
质子辐照绝缘材料的电荷存储特性
DOI:
--
发表时间:
2009
期刊:
影响因子:
--
作者:
[沼田, 丸田, 三宅, 田中, 高田]
通讯作者:
高田
DOI:
--
发表时间:
2008
期刊:
影响因子:
--
作者:
[S. Maruta, H Miyake, S Numata, Y Tanaka, T Takada]
通讯作者:
T Takada
Charge Accumulation in Election Beam Irradiated Various Polymers
电子束照射的各种聚合物中的电荷积累
DOI:
--
发表时间:
2010
期刊:
IEEJ Transactions on Electrical and Electronic Engineering
影响因子:
1
作者:
[Kenichiro Nagasawa, Masato Honjoh, Hiroaki Miyake, Rikio Watanabe, Yasuhiro Tanaka, Tatsuo Takada]
通讯作者:
Tatsuo Takada
プロトン照射ポリイミドフィルムの帯電特性
质子辐照聚酰亚胺薄膜的带电特性
DOI:
--
发表时间:
2009
期刊:
影响因子:
--
作者:
[沼田, 三宅, 田中, 高田, 岩井]
通讯作者:
岩井
高電界下におけるプロトン照射ポリイミド内の電荷蓄積特性
高电场下质子辐照聚酰亚胺的电荷存储特性
DOI:
--
发表时间:
2010
期刊:
影响因子:
--
作者:
[沼田, 柳川, 三宅, 田中, 高田]
通讯作者:
高田
共 7 条
Development of charging sensor using semiconductor with ultra-high resolution and charging analysis of spacecraft materials irradiated by proton
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批准号:23760292
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项目类别:Grant-in-Aid for Young Scientists (B)
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资助金额:$2.91万
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财政年份:2011
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负责人:MIYAKE Hiroaki
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依托单位:
海外基金