Development of charging sensor using semiconductor with ultra-high resolution and charging analysis of spacecraft materials irradiated by proton

超高分辨率半导体充电传感器的研制及质子辐照航天器材料的充电分析

• 批准号: 23760292
• 负责人: MIYAKE Hiroaki
• 金额: $ 2.91万
• 依托单位: Tokyo City University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Young Scientists (B)
• 财政年份: 2011
• 资助国家: 日本
• 起止时间: 2011 至 2012
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-23760292/
• 关键词: 宇宙機; 宇宙環境; プロトン; 帯電; PEA 法; 半導体; ポリイミド; 計測工学; 圧力波検出; 帯電計測; PEA法; 半導体センサ; プロトン照射

The spacecraft is always exposed to plasma and/or radioactive-rays such as 〓, 〓 and 〓-rays. When the insulating materials, in which the spacecraft is wrapped to keep temperature in it stable, are irradiated by the radioactive-rays, sometimes an unexpected accident due to an electrostatic discharge occurs. However, it has not known how the irradiation affects to change of the electrical properties of the materials. Therefore, as the satellite development needs the charging information and charging phenomena of surface materials of satellite on the orbit, we have developed the charging measurement system of it on the orbit with high radioactive-rays resistivity. In this paper, we started to develop new semiconductor sensor for charging measurement sensor using Pulsed electroacoustic (PEA) method. Furthermore, we also focused on an internal charging phenomenon on irradiated polyimide for spacecraft using small PEA system for irradiation using present polymer piezo sensor.

航天器总是暴露在等离子体和/或放射性射线中，如〓、〓和〓射线。当包裹航天器以保持温度稳定的绝缘材料受到放射性射线照射时，有时会发生由于静电放电而导致的意外事故。然而，辐照对材料电性能变化的影响尚不清楚。因此，由于卫星的发展需要卫星在轨表面材料的充电信息和充电现象，我们研制了卫星在高放射性射线电阻率轨道上的充电测量系统。本文采用脉冲电声（PEA）方法开发了一种用于充电测量传感器的新型半导体传感器。此外，我们还重点研究了使用小型PEA系统辐照的航天器用聚酰亚胺的内充电现象。

项目成果

プロトン照射されたポリイミドフィルムにおける帯電現象

质子辐照聚酰亚胺薄膜的带电现象

• 发表时间: 2011
• 作者: 内山龍;沼田誠也;三宅弘晃;田中康寛;高田達雄
• 通讯作者: 高田達雄

Protection of Materials and Structures from the Space Environment

保护材料和结构免受空间环境影响

• 发表时间: 2012
• 作者: J. Nishinaga;Jacob Kleiman et al.
• 通讯作者: Jacob Kleiman et al.

Charging and Discharging Characteristics on PI Films Irradiated by Proton

质子辐照下PI薄膜的充放电特性

• 发表时间: 2011
• 作者: Ryo Uchiyama;Seiya Numata;Hiroaki Miyake;Yasuhiro Tanaka and Tatsuo Takada
• 通讯作者: Yasuhiro Tanaka and Tatsuo Takada

プロトン照射PI材料の電気絶縁特性

质子辐照PI材料的电绝缘性能

• 发表时间: 2012
• 作者: N. Itagaki;K. Kuwahara;K. Nakahara;D. Yamashita;K. Kamataki;G. Uchida;K. Koga;M. Shiratani;三宅弘晃,内山龍,堀口皓平,田中康寛
• 通讯作者: 三宅弘晃,内山龍,堀口皓平,田中康寛

Charge Accumulation Phenomena in PI Film Irradiated by a Proton

质子辐照下PI薄膜中的电荷积累现象

• 发表时间: 2011
• 作者: Hiroaki Miyake;Ryou Uchiyama;Seiya Numata;Yasuhiro Tanaka;Tatsuo Takada
• 通讯作者: Tatsuo Takada