Flash Memory Effect in Intrinsic Josephson Junctions

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We have observed a flash memory behavior in highly anisotropic Y-123(γ～35) IJJs under the near layer-parallel magnetic field. The basic concept for the memory operation is the current induced transition of flux-flow state in IJJs which can be readable by the flux-flow voltage with low current bias. By the transition, the flux-flow state can be(re)-programmed and this state "1" is proved to be non-volatile. The flux-flow state can be erased by applying the higher current and again this state "0" is kept even the current is turned off. All above operations can be understood by the hysteretic transition of vortex configurations, namely, the Josephson vortices with and without pancake vortices under near-layer-parallel magnetic field.