Flash Memory Effect in Intrinsic Josephson Junctions

本征约瑟夫森结中的闪存效应

• 批准号: 21510137
• 负责人: HATANO Takeshi
• 金额: $ 3.16万
• 依托单位: National Institute for Materials Science
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 2009
• 资助国家: 日本
• 起止时间: 2009 至 2011
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-21510137/
• 关键词: 固有ジョセフソン接合; ジョセフソン磁束; ロックイン現象; 不揮発性記憶; 固有ジョセフソン効果

We have observed a flash memory behavior in highly anisotropic Y-123(γ～35) IJJs under the near layer-parallel magnetic field. The basic concept for the memory operation is the current induced transition of flux-flow state in IJJs which can be readable by the flux-flow voltage with low current bias. By the transition, the flux-flow state can be(re)-programmed and this state "1" is proved to be non-volatile. The flux-flow state can be erased by applying the higher current and again this state "0" is kept even the current is turned off. All above operations can be understood by the hysteretic transition of vortex configurations, namely, the Josephson vortices with and without pancake vortices under near-layer-parallel magnetic field.

我们观察到在近平行层磁场作用下，高各向异性Y-123（γ~35）IJs的闪存行为。存储器操作的基本概念是IJs中的磁通流状态的电流感应转变，其可以通过具有低电流偏置的磁通流电压来读取。通过这种转换，磁通流状态可以被（重新）编程，并且这种状态“1”被证明是非易失性的。磁通流状态可以通过施加更高的电流来擦除，并且即使电流关闭，该状态“0”也会保持。上述操作可以通过近层平行磁场下的涡结构的滞后转变来理解，即有和没有饼状涡的约瑟夫森涡。

项目成果

Lock-in phenomena of vortices in intrinsic Josephson junctions for THz oscillator

太赫兹振荡器本征约瑟夫森结涡旋的锁定现象

• 发表时间: 2011
• 作者: 吉田薫;黒内正仁;武内道一;荒木努;名西.之;菅野裕靖;阿彦由美;中村広隆;青柳克信;Takeshi Hatano and Huabing Wang
• 通讯作者: Takeshi Hatano and Huabing Wang

Hot spots and waves in Bi2Sr2CaCu2O8 intrinsic Josephson junction stacks: a study by low temperature scanning laser microscopy.

• DOI: 10.1103/physrevlett.102.017006
• 发表时间: 2008-07
• 期刊: Physical review letters
• 影响因子: 8.6
• 作者: Huabing Wang;S. Guénon;Jie Yuan;A. Iishi;S. Arisawa;T. Hatano;T. Yamashita;D. Koelle;R. Kle

Non-volatile Flash Memory Effect in Y-123 Intrinsic Josephson Junctions

Y-123 本征约瑟夫森结中的非易失性闪存效应

• 发表时间: 2009
• 作者: T. Hatano;M. Nagao;Y. Inamoto;H. Wang
• 通讯作者: H. Wang

Bi-2212 IJJs under layer parallel magnetic field-large mesa for THz cavity

Bi-2212 IJJs 层下平行磁场-太赫兹腔大台面

• 发表时间: 2011
• 作者: 吉田浩之;小川康宏;田中雄真;藤井彰彦;菊池裕嗣;尾崎雅則;T. Hatano and H. B. Wang
• 通讯作者: T. Hatano and H. B. Wang

Layer-by-layer growth and magnetic properties of Y_3Fe_5O_<12> thin films

Y_3Fe_5O_<12>薄膜的层层生长及磁性能

• 发表时间: 2009
• 期刊: J. Appl. Phys
• 作者: Y. Krockenberger;K. S. Yun;T. Hatano;S. Arisawa;M. Kawasaki;Y. Tokura
• 通讯作者: Y. Tokura