Flash Memory Effect in Intrinsic Josephson Junctions

在近层平行磁场下，我们观察到了高各向异性Y-123(γ~35) ijs的闪存行为。记忆操作的基本概念是电流诱导ijs中磁通状态的转换，这种转换可以通过低电流偏置的磁通电压来读取。通过转换，可以（重新）编程流体流动状态，并证明该状态“1”是非易失性的。通流状态可以通过施加更高的电流来消除，并且即使电流关闭，这种状态“0”也会保持。所有这些操作都可以通过涡旋构型的滞回跃迁来理解，即在近层平行磁场下有和没有煎饼涡旋的约瑟夫森涡旋。

We have observed a flash memory behavior in highly anisotropic Y-123(γ～35) IJJs under the near layer-parallel magnetic field. The basic concept for the memory operation is the current induced transition of flux-flow state in IJJs which can be readable by the flux-flow voltage with low current bias. By the transition, the flux-flow state can be(re)-programmed and this state "1" is proved to be non-volatile. The flux-flow state can be erased by applying the higher current and again this state "0" is kept even the current is turned off. All above operations can be understood by the hysteretic transition of vortex configurations, namely, the Josephson vortices with and without pancake vortices under near-layer-parallel magnetic field.