Study on control of magnetic properties in ferromagnetic nitride semiconductor nanostructures

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GaGdN/ AlGaN multi-double quantum well and GaDyN/ GaN double barrier structures were grown by radio-frequency plasma-assisted molecular-beam epitaxy on GaN(0001) templates. Ferromagnetic behavior is confirmed for the samples at room temperature for all samples. Strong photoluminescence was observed from both GaGdN and GaN quantum wells at higher energy side of GaN excitonic peak. Enhanced g-factor was estimated to be about 60 for GaGdN/ AlGaN structure sample with quantum wells thickness of 1 nm. It is larger than GaN(g factor : 2). It is found that the interlayer coupling exists between GaDyN quantum wells. It is easy to control magnetic properties in the nanostructures.