Development of photo-excited dielectric relaxation method : selective and quantitative analyses of excitation and relaxation processes of photoactive sites.

点击翻译按钮获取中文摘要

Rare-earth doped semiconductors are one of topical materials for opto-electric devices. I proposed a new analytical technique of luminescence mechanisms of the materials by using an electronic technique, namely, photo excited dielectric relaxation(PEDR). An experimental setup for PEDR was developed. Selective and quantitative analyses of elementary processes for luminescence of Sm doped TiO2 were successfully realized with the setup. Moreover, charge dissipation processes that cause quenching were identified. Interface states of TiO2 microcrystals which induce luminescence and quenching were characterized.