Memory effect on ferroelectric-fluorescence nano-ordered layer structure and its application to optoelectronic nonvolatile memory

为了实现光电非易失性存储，研究了铁电/荧光纳米有序层结构的制备和表征。特别是首次研究了用溶胶凝胶法在SrTiO3(110)衬底上生长的(Ba&lt；0.6&gt；sr&lt；0.4&gt；)Ti03(BST)/(sr&lt；0.8&gt；Eu&lt；0.2&gt；)Bi2Ta_2O_9(Eu-SBT)结构的结晶度、电学和光学性质。在目前的结构中，Eu-SBT薄膜部分含有(116)取向的微晶，BST/Eu-SBT结构的极化-电压特性显示出自发极化反转引起的磁滞回线。在BST/Eu-SBT结构的光致发光和电致发光光谱中观察到Eu~(3+)离子的几个发射。总之，BST/Eu-SBT/STO(110)结构有望成为光电非易失性存储器件的候选材料。

Fabrication and characterization of the ferroelectric/fluorescent nano-order layer structures were investigated in order to realize optoelectronic nonvolatile memory. Particularly, the crystallinity, electrical, and optical properties of sol-gel-derived(Ba_<0.6> Sr_<0.4>) TiO_3(BST)/(Sr_<0.8> Eu_<0.2>) Bi_2Ta_2O_9(Eu-SBT) structures grown on SrTiO_3(110) substrates were clarified for the first time, in which BST and Eu-SBT were used as ferroelectrics and phosphor, respectively. In the present structures, the Eu-SBT films partly included a(116)-oriented crystallite, and then the polarization vs. voltage characteristics of the BST/Eu-SBT structures showed the hysteresis loop caused by spontaneous polarization reversal. Several emissions from Eu^(3+) ion were observed in photoluminescence and electroluminescence spectra of a present BST/Eu-SBT structure. In conclusion, BST/Eu-SBT/STO(110) structures were promising candidate for optoelectronic nonvolatile memory devices.