Memory effect on ferroelectric-fluorescence nano-ordered layer structure and its application to optoelectronic nonvolatile memory

铁电荧光纳米有序层结构的记忆效应及其在光电非易失性存储器中的应用

• 批准号: 21560338
• 负责人: AIZAWA Koji
• 金额: $ 2.91万
• 依托单位: Kanazawa Institute of Technology
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 2009
• 资助国家: 日本
• 起止时间: 2009 至 2011
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-21560338/
• 关键词: 薄膜・量子構造; 電気・電子材料; 強誘電体; 蛍光体; Eu添加SBT; BST; 分極特性; EL発光; ナノ構造; 不揮発性メモリ; エレクトロスミネセンス; STO単結晶基板; スピンコート法; フォトルミネッセンス(PL); ヒステリシス特性; 回転輻射乾燥法; 積層構造; PVDF; TrFE; SBT:Eu

Fabrication and characterization of the ferroelectric/fluorescent nano-order layer structures were investigated in order to realize optoelectronic nonvolatile memory. Particularly, the crystallinity, electrical, and optical properties of sol-gel-derived(Ba_<0.6> Sr_<0.4>) TiO_3(BST)/(Sr_<0.8> Eu_<0.2>) Bi_2Ta_2O_9(Eu-SBT) structures grown on SrTiO_3(110) substrates were clarified for the first time, in which BST and Eu-SBT were used as ferroelectrics and phosphor, respectively. In the present structures, the Eu-SBT films partly included a(116)-oriented crystallite, and then the polarization vs. voltage characteristics of the BST/Eu-SBT structures showed the hysteresis loop caused by spontaneous polarization reversal. Several emissions from Eu^(3+) ion were observed in photoluminescence and electroluminescence spectra of a present BST/Eu-SBT structure. In conclusion, BST/Eu-SBT/STO(110) structures were promising candidate for optoelectronic nonvolatile memory devices.

为了实现光电非易失性存储，研究了铁电/荧光纳米有序层结构的制备和表征。特别是首次研究了用溶胶凝胶法在SrTiO3(110)衬底上生长的(Ba&lt；0.6&gt；sr&lt；0.4&gt；)Ti03(BST)/(sr&lt；0.8&gt；Eu&lt；0.2&gt；)Bi2Ta_2O_9(Eu-SBT)结构的结晶度、电学和光学性质。在目前的结构中，Eu-SBT薄膜部分含有(116)取向的微晶，BST/Eu-SBT结构的极化-电压特性显示出自发极化反转引起的磁滞回线。在BST/Eu-SBT结构的光致发光和电致发光光谱中观察到Eu~(3+)离子的多次发射。总之，BST/Eu-SBT/STO(110)结构有望成为光电非易失性存储器件的候选材料。

项目成果

ポリフッ化ビニリデンIII型膜の電気的特性

III型聚偏二氟乙烯薄膜的电性能

• 发表时间: 2009
• 作者: 稲垣浩行;伊藤正樹;村松尚季;大城浩徳;得永嘉昭;會澤康治
• 通讯作者: 會澤康治

SrTiO_3 : Nb単結晶基板上に形成したEu添加SBT薄膜の特性評価

SrTiO_3：Nb单晶衬底上形成的Eu掺杂SBT薄膜的特性评估

• 发表时间: 2010
• 作者: 橋本直也;稲垣浩行;大城浩徳;堀邊英夫;得永嘉昭;會澤康治
• 通讯作者: 會澤康治

Correlation between Ferroelectric and Fluorescent Properties by introducing Eu Atoms into Strontium Bismuth Tantalate Films

将Eu原子引入钽酸锶铋薄膜中铁电性能与荧光性能的相关性

• 发表时间: 2009
• 期刊: Rare-Earth Doping of Advanced Materials for Photonic Applications
• 作者: Koji Aizawa and Yusuke Ohtani;V. Dierolf;Y. Fujiwara;U. Hommerich;P. Ruterana;J. Zavada
• 通讯作者: J. Zavada

Fabrication and Characterization of ZnO:Al/Sr0.8Bi2.2Ta2O9/Y2O3:Eu Structures for Ferroelectric-Electroluminescent Devices

铁电电致发光器件 ZnO:Al/Sr0.8Bi2.2Ta2O9/Y2O3:Eu 结构的制备和表征

• DOI: 10.1143/jjap.48.09ka11
• 发表时间: 2009
• 期刊: Japanese Journal of Applied Physics
• 影响因子: 1.5
• 作者: K. Aizawa;H. Inagaki;Yushi Takatsuka;Koichi Hoko;Yusuke Otani;Y. Tokunaga
• 通讯作者: Y. Tokunaga

導電性基板上に形成したBST/Eu添加SBT積層構造の特性評価

导电基板上形成的 BST/Eu 掺杂 SBT 堆叠结构的特性评估

• 发表时间: 2011
• 作者: 橋本直也;稲垣浩行;大城浩徳;堀邊英夫;得永嘉昭;會澤康治
• 通讯作者: 會澤康治