Preparation of High-quality Bi-2223 Single Crystal Thin Film for Intrinsic Josephson Junctions used in THz Emission
Preparation of High-quality Bi-2223 Single Crystal Thin Film for Intrinsic Josephson Junctions used in THz Emission
批准号:
21560339
负责人:
ENDO Kazuhiro
金额:
$3.0万
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (C)
财政年份:
2009
资助国家:
日本
项目状态:
已结题
起止时间:
2009 至 2011
中文摘要
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英文摘要
Terahertz electromagnetic waves are expected to be applied for "safety and security" devices such as detectors of cancer cells and non-destructive inspection tools instead of X-rays. The theory on terahertz coherent emission from intrinsic Josephson junctions has been proposed and recently demonstrated for bulk crystals of Bi-2212 superconducting materials. However, the intensity of emission is weak for practical use. In order to solve the "low intensity problem" new device structures using thin films are proposed. To approach and demonstrate this idea, high-quality non c-axis oriented Bi-2223 thin films are prepared by metalorganic chemical vapor deposition.
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Investigation of I–V characteristics of Bi-2212 intrinsic Josephson junctions for THz-wave generation
研究用于产生太赫兹波的 Bi-2212 本征约瑟夫森结的 I-V 特性
DOI:
10.1016/j.physc.2009.05.214
发表时间:
2009
期刊:
Physica C-superconductivity and Its Applications
影响因子:
1.7
作者:
[T. Tachiki, A. Sugawara, T. Uchida]
通讯作者:
T. Uchida
Thin Films of the Insulating(001)CaCuO_2 Infinite-Layer with Low Roughness and Highly Uniform Morphology
低粗糙度、形貌高度均匀的绝缘(001)CaCuO_2无限层薄膜
DOI:
--
发表时间:
2010
期刊:
Trans.Mater.Res.Soc.Jpn VOL.35
影响因子:
--
作者:
[S. Nishi, N. Kojima, C. Morales, M. Yamaguchi, K.Endo]
通讯作者:
K.Endo
Preparation of High-Quality Oxide Thin Films Applied to Safe and Secure Electronic Devices
高质量氧化物薄膜的制备应用于安全可靠的电子设备
DOI:
--
发表时间:
2009
期刊:
The Papers of Technical Meeting on Physical Sensor, IEE Jpn. PHS-09-16-42
影响因子:
--
作者:
[K.Endo, S.Arisawa]
通讯作者:
S.Arisawa
超伝導100年記念講演、超伝導の歴史、現状と将来
超导100周年讲座,超导的历史、现状与未来
DOI:
--
发表时间:
2011
期刊:
影响因子:
--
作者:
[N. Kojima, M. Natori, H. Suzuki, M. Yamaguchi, 立木昌]
通讯作者:
立木昌
General Growth Problems of SIS Heterostructure Based on YBa_2Cu_3O_7 and BiSrCaCuO thin Film
基于YBa_2Cu_3O_7和BiSrCaCuO薄膜的SIS异质结构的一般生长问题
DOI:
--
发表时间:
2009
期刊:
影响因子:
--
作者:
[立木隆, 内田貴司, 立木昌, 遠藤和弘, 有沢俊一, K. Endo, K.Endo]
通讯作者:
K.Endo
共 56 条
国内基金
海外基金
Bi-2223高温超导薄膜及微阵列的制备研究
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批准号:--
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项目类别:面上项目
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资助金额:58万元
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批准年份:2021
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负责人:雷黎
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依托单位: