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SET Immune Spaceborne LSI Circuit Designs by Embedding Cascade Voltage Switch Logic Circuits, High-speed Gates, and Neuron MOS structures

SET Immune Spaceborne LSI Circuit Designs by Embedding Cascade Voltage Switch Logic Circuits, High-speed Gates, and Neuron MOS structures
通过嵌入级联电压开关逻辑电路、高速门和神经元MOS结构来进行SET免疫星载LSI电路设计
批准号:
21560375
负责人:
HATANO Hiroshi
金额:
$3.0万
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (C)
财政年份:
2009
资助国家:
日本
项目状态:
已结题
起止时间:
2009-04-01 至 2014-03-31

项目摘要

项目成果

HATANO Hiroshi的其他基金

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中文摘要
翻译
通过嵌入级联电压开关逻辑(CVSL)电路、高速门和神经元MOS结构,设计了容单事件星载LSI电路。使用SPICE研究了单事件瞬态(SET)对CVSL电路的影响。静态 CVSL 和时钟 CVSL (C2VSL) 电路已利用双多晶硅双金属 N 阱 CMOS 技术成功制造。芯片测量已证实 CVSL 半加器、C2VSL 半加器和 C2VSL 全加器能够正常工作。 SET 仿真结果证实,CVSL 和 C2VSL 电路对 SET 的耐受性有所提高。将 CVSL 和 C2VSL 电路的 SET 容差与传统 CMOS 电路的 SET 容差进行比较,表明 CVSL 和 C2VSL 电路是 SET 容差星载电路的候选者。 CVSL电路比传统CMOS电路硬200多倍,C2VSL电路硬十倍。
英文摘要
Single event tolerant spaceborne LSI circuits have been designed by embedding cascade voltage switch logic (CVSL) circuits, high-speed gates, and neuron MOS structures.Single event transient (SET) effects on CVSL circuits have been investigated using SPICE. Static CVSL and clocked CVSL (C2VSL) circuits have been successfully fabricated utilizing a double polysilicon double metal N-well CMOS technology. A CVSL half adder, a C2VSL half adder and a C2VSL full adder have confirmed to function correctly by the chip measurements. SET simulation results have confirmed that the CVSL and C2VSL circuits have increased tolerance to SET. SET tolerance for the CVSL and C2VSL circuits is compared to that for the conventional CMOS circuits, showing that the CVSL and C2VSL circuits are candidates for a SET tolerant spaceborne circuit. CVSL circuits are more than 200 times harder and C2VSL circuits are ten times harder than conventional CMOS circuits.
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Single event effects on static and clocked cascade voltage switch logic circuits
单事件对静态和时钟级联电压开关逻辑电路的影响
DOI: --
发表时间: 2009
期刊: IEEE Trans. Nuclear Science
影响因子: --
作者: [設楽修平, 他, H. Hatano]
通讯作者: H. Hatano
Novel test circuit structures using selectively metal-covered transistors for a laser irradiation upset analysis
使用选择性金属覆盖晶体管进行激光辐照翻转分析的新颖测试电路结构
DOI: --
发表时间: 2011
期刊:
影响因子: --
作者: [Hiroshi Hatano]
通讯作者: Hiroshi Hatano
Single event effect analysis on C^2VSL circuit with gated feedback
带门控反馈的C^2VSL电路的单粒子效应分析
DOI: --
发表时间: 2010
期刊: Proceedings of the 11th European Conference on Radiation Effects on Components and Systems, Langenfeld
影响因子: --
作者: [佐藤進, 内田勝, 河村希典, Y. Kanai, H. Hatano]
通讯作者: H. Hatano
A simulation-based re-examination of single event transient pulse propagation failures in NOR/NAND devices
基于仿真的 NOR/NAND 器件中单事件瞬态脉冲传播故障的重新检查
DOI: --
发表时间: 2013
期刊:
影响因子: --
作者: [佐藤進, 葉茂, H. Hatano]
通讯作者: H. Hatano
10
    結膜培養細胞のヘルペスウイルス感染による免疫レセプターの誘導とその意義
    • 批准号:
      04671081
    • 项目类别:
      Grant-in-Aid for General Scientific Research (C)
    • 资助金额:
      $1.02万
    • 财政年份:
      1992
    • 负责人:
      HATANO Hiroshi
    • 依托单位: