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Establishment of new growth technology oflow temperature super oxide ionic conductor lanthanum silicate single-crystal used for SOFC

Establishment of new growth technology oflow temperature super oxide ionic conductor lanthanum silicate single-crystal used for SOFC
SOFC用低温超氧化物离子导体硅酸镧单晶生长新工艺的建立
批准号:
21560730
负责人:
NAKAYAMA Susumu
金额:
$3.0万
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (C)
财政年份:
2009
资助国家:
日本
项目状态:
已结题
起止时间:
2009 至 2011

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中文摘要
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英文摘要
Hexagonal apatite type La_<9.33>(SiO_4)_6O_2 and La_<9.7> Si_6O_<26.55> single crystals as an oxide ionic conductor have been successfully prepared by the sintering method, and an anisotropy in their conductivities was confirmed. The conductivity component parallel to the c-axis was 10-100 times higher than the perpendicular component.
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Oxide ionic conductivities of apatite-type lanthanum silicates and germinates and their possibilities as an electrolyte of lower temperature operating SOFC
磷灰石型硅酸镧和萌芽体的氧化物离子电导率及其作为低温运行 SOFC 电解质的可能性
DOI: --
发表时间: 2010
期刊: Ceramics International
影响因子: 5.2
作者: [Y. Higuchi, M. Sugawara, K. Onishi, M. Sakamoto and S. Nakayama]
通讯作者: M. Sakamoto and S. Nakayama
Immobilizated Technique of Harmful Metallic Element by Crystalline Ziroconium Phosphate
  • 批准号:
    14380281
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
  • 资助金额:
    $8.38万
  • 财政年份:
    2002
  • 负责人:
    NAKAYAMA Susumu
  • 依托单位:
海外基金