High performance of eco-friendly magnesium system thermoelectric material by the controlled defect and composition.
High performance of eco-friendly magnesium system thermoelectric material by the controlled defect and composition.
批准号:
21560732
负责人:
ISODA Yukihiro
金额:
$3.0万
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (C)
财政年份:
2009
资助国家:
日本
项目状态:
已结题
起止时间:
2009 至 2011
中文摘要
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英文摘要
Mg_2SiSn system thermoelectric semiconductor, which introduced the schottky defect or the Fraenkel defect, changed the conduction type by those defects. Those causes were 1) an electron as a donor was produced by the Fraenkel defect of Mg atom, 2) a hole as an acceptor was produced by the schottky defect of the interstitial Mg atom.The electron concentration of Mg2SiSn with the grain boundary defect was decreased remarkably, this is, the electronic trap-level was formed by the grain boundary defect. Therefore, a hole became dominant and p-type conduction was shown.The controlling of carrier concentration by these defects was possible.The performance of p-type Mg2SiSn by the controlling of defect and composition was improved about 3 times.
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Thermoelectric Properties of p-type Mg_2Si_<0.25> Sn_<0.75> with Li and Ag double-doping
Li、Ag双掺杂p型Mg_2Si_<0.25> Sn_<0.75>的热电性能
DOI:
--
发表时间:
2010
期刊:
JOURNAL OF ELECTRONIC MATERIALS
影响因子:
2.1
作者:
[Y. Isoda, S. Tada, H. Fujyu, T. Nagai and Y. Shinohara]
通讯作者:
T. Nagai and Y. Shinohara
Thermoelectric Properties for p-type Mg_<1.98>Si_<0.25>Sn_<0.75> with Li and Ag double-doping
Li、Ag双掺杂p型Mg_<1.98>Si_<0.25>Sn_<0.75>的热电性能
DOI:
--
发表时间:
2010
期刊:
JOURNAL OF ELECTRONIC MATERIALS
影响因子:
2.1
作者:
[Y.ISODA, T.TADA, H.Fujyu, T.NAGAI, Y.SHINOHARA]
通讯作者:
Y.SHINOHARA
Thermoelectric properties of Mg_2Si_<0.5>Sn_<0.5> with doped Sb or Bi
掺杂Sb或Bi的Mg_2Si_<0.5>Sn_<0.5>的热电性能
DOI:
--
发表时间:
2011
期刊:
影响因子:
--
作者:
[X J.Lu, D.Yamamoto, K Kuroda, R Ichino, M.Okido., 磯田幸宏]
通讯作者:
磯田幸宏
マグネシウムシリサイドの熱電特性に及ぼす結晶性の影響
结晶度对硅化镁热电性能的影响
DOI:
--
发表时间:
2011
期刊:
影响因子:
--
作者:
[T.Iida, K.Kuroda, R.Ichino, M.Okido, 高橋良幸,國政惠美,石田大輔,鵜殿治彦,上田聖,磯田幸宏]
通讯作者:
高橋良幸,國政惠美,石田大輔,鵜殿治彦,上田聖,磯田幸宏
Thermoelectric Performance of p-type Mg_<1.98> Si_<0.25> Sn_<0.75> with Li and Ag double-doping
Li、Ag双掺杂p型Mg_<1.98> Si_<0.25> Sn_<0.75>热电性能
DOI:
--
发表时间:
2009
期刊:
影响因子:
--
作者:
[Y. ISODA, S. TADA, H. Fujyu, T. NAGAI, Y. SHINOHARA]
通讯作者:
Y. SHINOHARA
共 34 条
Research on nano-microstructure control of the thermoelectric semiconductor by a solid phase process
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批准号:15560613
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项目类别:Grant-in-Aid for Scientific Research (C)
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资助金额:$2.3万
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财政年份:2003
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负责人:ISODA Yukihiro
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依托单位: