High performance of eco-friendly magnesium system thermoelectric material by the controlled defect and composition.

通过控制缺陷和成分实现高性能环保镁系热电材料。

• 批准号: 21560732
• 负责人: ISODA Yukihiro
• 金额: $ 3万
• 依托单位: National Institute for Materials Science
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 2009
• 资助国家: 日本
• 起止时间: 2009 至 2011
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-21560732/
• 关键词: Mg2SiSn; 格子欠損; 格子間原子; 熱電特性; 伝導型制御; キャリア濃度; Mg_2SiSn; 熱電変換; 置換型欠陥; 粒界効果; 伝導機構; 熱起電力; 液-固相反応合成法; 輸送特性; 伝導型; ゼーベック係数

Mg_2SiSn system thermoelectric semiconductor, which introduced the schottky defect or the Fraenkel defect, changed the conduction type by those defects. Those causes were 1) an electron as a donor was produced by the Fraenkel defect of Mg atom, 2) a hole as an acceptor was produced by the schottky defect of the interstitial Mg atom.The electron concentration of Mg2SiSn with the grain boundary defect was decreased remarkably, this is, the electronic trap-level was formed by the grain boundary defect. Therefore, a hole became dominant and p-type conduction was shown.The controlling of carrier concentration by these defects was possible.The performance of p-type Mg2SiSn by the controlling of defect and composition was improved about 3 times.

在Mg_2SiSn系热电半导体中引入肖特基缺陷或Fraenkel缺陷，这些缺陷改变了半导体的导电类型。这是由于Mg原子的Fraenkel缺陷产生电子作为施主，间隙Mg原子的Schoenkel缺陷产生空穴作为受主，晶界缺陷使Mg_2SiSn的电子浓度显著降低，即晶界缺陷形成了电子陷阱能级。通过这些缺陷控制载流子浓度是可能的，通过控制缺陷和成分，p型Mg2SiSn的性能提高了约3倍。

项目成果

Thermoelectric Properties of p-type Mg_2Si_<0.25> Sn_<0.75> with Li and Ag double-doping

Li、Ag双掺杂p型Mg_2Si_<0.25> Sn_<0.75>的热电性能

• 发表时间: 2010
• 期刊: JOURNAL OF ELECTRONIC MATERIALS
• 影响因子: 2.1
• 作者: Y. Isoda;S. Tada;H. Fujyu;T. Nagai and Y. Shinohara
• 通讯作者: T. Nagai and Y. Shinohara

Thermoelectric Properties for p-type Mg_<1.98>Si_<0.25>Sn_<0.75> with Li and Ag double-doping

Li、Ag双掺杂p型Mg_<1.98>Si_<0.25>Sn_<0.75>的热电性能

• 发表时间: 2010
• 期刊: JOURNAL OF ELECTRONIC MATERIALS
• 影响因子: 2.1
• 作者: Y.ISODA;T.TADA;H.Fujyu;T.NAGAI;Y.SHINOHARA
• 通讯作者: Y.SHINOHARA

Thermoelectric properties of Mg_2Si_<0.5>Sn_<0.5> with doped Sb or Bi

掺杂Sb或Bi的Mg_2Si_<0.5>Sn_<0.5>的热电性能

• 发表时间: 2011
• 作者: X J.Lu;D.Yamamoto;K Kuroda;R Ichino;M.Okido.;磯田幸宏
• 通讯作者: 磯田幸宏

マグネシウムシリサイドの熱電特性に及ぼす結晶性の影響

结晶度对硅化镁热电性能的影响

• 发表时间: 2011
• 作者: T.Iida;K.Kuroda;R.Ichino;M.Okido;高橋良幸,國政惠美,石田大輔,鵜殿治彦,上田聖,磯田幸宏
• 通讯作者: 高橋良幸,國政惠美,石田大輔,鵜殿治彦,上田聖,磯田幸宏

Thermoelectric Performance of p-type Mg_<1.98> Si_<0.25> Sn_<0.75> with Li and Ag double-doping

Li、Ag双掺杂p型Mg_<1.98> Si_<0.25> Sn_<0.75>热电性能

• 发表时间: 2009
• 作者: Y. ISODA;S. TADA;H. Fujyu;T. NAGAI;Y. SHINOHARA
• 通讯作者: Y. SHINOHARA