Fabrication of Photovoltaic Compound Semiconductor Nanowires Array Using Electrodeposition Technique

从酸性水溶液中电沉积ZnTe化合物半导体。在-0 ℃电沉积ZnTe的化学组成。8V时，ZnTe的最佳电沉积电位为约-8V。0. 8V，低于Zn的平衡电位。从具有单一相ZnTe的存款获得的UV-VIS吸收光谱表明，在小于550 nm的波长范围内观察到光吸收。具有ZnTe单相的存款的带隙能量为2。13电子伏。沉积态非晶ZnTe的电阻率约为0.001。而ZnTe在683 K退火后的电阻为10^4Ωm左右，接近ZnTe单晶的电阻值。

ZnTe compound semiconductors were electrodeposited from acidic aqueous solution. Chemical composition of ZnTe electrodeposited at-0. 8V was close to the stoichiometry composition and optimum cathode potential for electrodeposition of ZnTe was determined to be ca.-0. 8V which was under potential range to the equilibrium potential of Zn. UV-VIS absorption spectra obtained from the deposit with a single phase of ZnTe revealed that the optical absorption was observed in the wave length range less than around 550nm. Band gap energy of the deposit with ZnTe single phase showed 2. 13eV. Resistivity of as-deposited amorphous ZnTe was ca. 10^6Ωm while that of ZnTe with annealing at 683K was around 10^4Ωm which was close to the value of ZnTe single crystal.