Fabrication of Photovoltaic Compound Semiconductor Nanowires Array Using Electrodeposition Technique

从酸性水溶液中电沉积了ZnTe化合物半导体。在-0℃下电沉积的ZnTe的化学成分。8V接近化学计量比成分，电沉积的最佳阴极电位约为-0。8V，低于锌的平衡电位范围。单相ZnTe镀层的UV-Vis吸收光谱表明，在550 nm左右的波长范围内观察到光学吸收。单相ZnTe镀层的禁带宽度为2.13 eV。沉积前的非晶态ZnTe的电阻率约为10^6Ωm，而683K下热处理的非晶态ZnTe的电阻率约为10^4Ωm，接近于单晶的值。

ZnTe compound semiconductors were electrodeposited from acidic aqueous solution. Chemical composition of ZnTe electrodeposited at-0. 8V was close to the stoichiometry composition and optimum cathode potential for electrodeposition of ZnTe was determined to be ca.-0. 8V which was under potential range to the equilibrium potential of Zn. UV-VIS absorption spectra obtained from the deposit with a single phase of ZnTe revealed that the optical absorption was observed in the wave length range less than around 550nm. Band gap energy of the deposit with ZnTe single phase showed 2. 13eV. Resistivity of as-deposited amorphous ZnTe was ca. 10^6Ωm while that of ZnTe with annealing at 683K was around 10^4Ωm which was close to the value of ZnTe single crystal.