High-Field EPR with optical detection in semiconductors

半导体中采用光学检测的高场 EPR

• 批准号: 5382689
• 负责人: Professor Dr. Siegmund Greulich-Weber
• 金额: --
• 依托单位: Arbeitsgruppe Materialien für die Photonik und Optoelektronik Magnetische Resonanzspektroskopie (aufgelöst)
• 依托单位国家: 德国
• 项目类别: Priority Programmes
• 财政年份: 2002
• 资助国家: 德国
• 起止时间: 2001-12-31 至 2005-12-31
• 项目状态: 已结题
• 来源: https://gepris.dfg.de/gepris/projekt/5382689?language=en
• 关键词: Field; EPR; optical; detection; semiconductors

High-field EPR and ENDOR with optical detection (high field ODMR) can have several advantages over conventional high-field EPR using microwave bridges: Higher sensitivity allowing the investigation of low defect concentrations in very small volumes and direct correlation of optical and microscopical properties. We want to improve our 72/95 GHz ODMR set up for PL-(photoluminescence) detected EPR/ENDOR with respect to better cavities with optical access for PL-ENDOR. Furthermore we want to investigate the structure of P-related dopants implanted into thin epitaxial layers of 4H- and 6H-SiC with respect to their lattice sites, electronic and microscopic structures as well as the accompanying implantation defects and their annealing properties.

高场EPR和ENDOR与光学检测（高场ODMR）相比，使用微波桥的传统高场EPR有几个优点：更高的灵敏度，允许在非常小的体积内研究低缺陷浓度，并直接关联光学和显微镜特性。我们希望改进我们的72/95 GHz ODMR设置，用于PL-（光致发光）检测EPR/ENDOR，以获得更好的PL-ENDOR光接入腔。此外，我们要调查的结构的P-相关的掺杂剂注入到薄外延层的4 H-和6 H-SiC相对于它们的晶格位置，电子和微观结构，以及伴随的注入缺陷和它们的退火性能。