High-Field EPR with optical detection in semiconductors

与使用微波桥的传统高场EPR相比，高场EPR和带光学检测的Endor(高场ODMR)具有几个优势：更高的灵敏度，允许在非常小的体积内研究低缺陷浓度，以及光学和显微特性的直接关联。我们希望改进我们用于光致发光(光致发光)检测的EPR/Endor的72/95 GHz ODMR设置，以便为PL-Endor提供更好的光学访问腔。此外，我们还想要研究注入到4H-和6H-SiC薄外延层中的与P相关的杂质的结构、晶格位置、电子结构和微观结构，以及伴随的注入缺陷和它们的退火性。

High-field EPR and ENDOR with optical detection (high field ODMR) can have several advantages over conventional high-field EPR using microwave bridges: Higher sensitivity allowing the investigation of low defect concentrations in very small volumes and direct correlation of optical and microscopical properties. We want to improve our 72/95 GHz ODMR set up for PL-(photoluminescence) detected EPR/ENDOR with respect to better cavities with optical access for PL-ENDOR. Furthermore we want to investigate the structure of P-related dopants implanted into thin epitaxial layers of 4H- and 6H-SiC with respect to their lattice sites, electronic and microscopic structures as well as the accompanying implantation defects and their annealing properties.