Generation of highly spin-polarized electron beams by using two-photon excitation process from GaAs semiconductors.

利用 GaAs 半导体的双光子激发过程产生高度自旋极化的电子束。

• 批准号: 21740175
• 负责人: YAMAMOTO Naoto
• 金额: $ 2.83万
• 依托单位: Nagoya University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Young Scientists (B)
• 财政年份: 2009
• 资助国家: 日本
• 起止时间: 2009 至 2010
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-21740175/
• 关键词: 加速器; スピン偏極電子源; ビーム物理; 半導体; スピン偏極電子; 電子源

In case that the laser power was around the threshold power of two photon excitation from GaAs semiconductors, it is found that the measured electron spin polarization (ESP) was only around 20%, which is much lower than estimated value, which is higher than 90%. It is considered that the ESP degradation is caused by the exists of harmonics in excitation laser and impurity energy states in GaAs semiconductors. To obtain higher than 90% ESP, we have to make more complicate researches & developments for laser system and sample preparation.

当激光功率在GaAs半导体双光子激发的阈值功率附近时，测得的电子自旋极化率（ESP）仅为20%左右，远低于估计值（大于90%）。分析认为，ESP退化是由于激发激光中谐波的存在和GaAs半导体中杂质能态的存在引起的。为了获得90%以上的电除尘器，我们必须对激光系统和样品制备进行更复杂的研究和开发。

项目成果

Real Time Magnetic Imaging by Spin-Polarized Low Energy Electron Microscopy with Highly Spin-Polarized and High Brightness Electron Gun

• DOI: 10.1143/apex.3.026601
• 发表时间: 2010-01
• 期刊: Applied Physics Express
• 影响因子: 2.3
• 作者: Masahiko Suzuki;Michihiro Hashimoto;T. Yasue;T. Koshikawa;Y. Nakagawa;T. Konomi;A. Mano;N. Yamamoto;M. Kuwahara;M. Yamamoto;S. Okumi;T. Nakanishi;X. Jin;T. Ujihara;Y. Takeda;T. Kohashi;T. Ohshima;T. Saka;T. Kato;H. Horinaka

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Status of the high brightness polarized electron source using transmission photocathode

透射光电阴极高亮度偏振电子源的现状

• DOI: 10.1088/1742-6596/298/1/012017
• 发表时间: 2011
• 期刊: Journal of Physics : Conference Series
• 作者: X.G.Jin;T.Ujihara;Y.Takeda;他
• 通讯作者: 他

Strain of GaAs/GaAsP Superlattices Used as Spin-Polarized Electron Photocathodes Determined by X-Ray Diffraction

X 射线衍射测定用作自旋极化电子光电阴极的 GaAs/GaAsP 超晶格应变

• 发表时间: 2010
• 期刊: e-J ournal of Surf.Sci.Nanotechnol. 8
• 作者: T.Saka;Y.Ishida;M.Kanda;X.G.Jin;Y.Maeda;S.Fuchi;T.Ujihara;Y.Takeda;T.Matsuyama;H.Horinaka;T.Kato;N.Yamamoto;A.Mano;Y.Nakagawa;M.Kuwahara;S.Okumi;T.Nakanishi;M.Yamamoto;T.Ohshima;T.Kohashi;M.Suzuki;M.Hashimoto;T.Yasue;T.Koshikawa
• 通讯作者: T.Koshikawa