Carrier lifetime evaluation in organic semiconductor by low-frequency noise measurement

半导体中的载流子寿命是通过低频噪声测量来评估的。在Si中，载流子寿命约为100 μs。Si中载流子寿命的温度依赖性表明，载流子散射机制由离子杂质散射转变为声子散射。并五苯的载流子寿命约为100 μs。并五苯中载流子寿命的温度依赖性表明，载流子输运机制由跳变输运转变为带输运。

Carrier lifetime in semiconductors is evaluated by low-frequency noise measurements. In Si, carrier lifetime is evaluated as in the order of 100 μs. Temperature dependence of carrier lifetime in Si shows that carrier scattering mechanism changes from ionized impurity scattering to phonon scattering. In pentacene, carrier lifetime is evaluated as in the order of 100 μs. Temperature dependence of carrier lifetime in pentacene implies that carrier transport mechanism changes from hopping transport to band transport.