Carrier lifetime evaluation in organic semiconductor by low-frequency noise measurement

半导体中的载流子寿命是通过测量低频噪声来评估的。在硅中，载流子寿命约为100μS量级。载流子寿命随温度的变化表明，载流子散射机制由电离杂质散射转变为声子散射。在并五苯中，载流子寿命约为10 0μS，温度依赖性表明，载流子输运机制由跳跃输运转变为能带输运。

Carrier lifetime in semiconductors is evaluated by low-frequency noise measurements. In Si, carrier lifetime is evaluated as in the order of 100 μs. Temperature dependence of carrier lifetime in Si shows that carrier scattering mechanism changes from ionized impurity scattering to phonon scattering. In pentacene, carrier lifetime is evaluated as in the order of 100 μs. Temperature dependence of carrier lifetime in pentacene implies that carrier transport mechanism changes from hopping transport to band transport.