Development of advanced ferroelectric random access memory devices in more extensive region

作为无铅铁电体与宽禁带半导体的结合体，在金刚石衬底上制备了（Pr，Mn）共掺杂BiFeO 3（BPFM）/B掺杂金刚石层状结构。采用微波等离子体增强化学气相沉积法在金刚石衬底上均匀外延生长掺硼金刚石薄膜。然后，通过脉冲激光沉积在掺硼金刚石层上沉积BPFM薄膜。BPFM薄膜是在掺硼金刚石层上随机取向的多晶薄膜。在室温下，当最大电场为900 kV/cm时，所制备的异质结构具有饱和的P-E滞后曲线，其2 Pr为90℃/cm^2，2 Ec为740 kV/cm。当测量温度升高到200 ℃时，仍能观察到不受漏电流影响的P-E磁滞曲线

As an integration of Pb-free ferroelectrics with wide-gap semiconductors, (Pr, Mn)-codoped BiFeO_3 (BPFM)/B-doped diamond layered structure was fabricated on a diamond substrate. B-doped diamond films were homoepitaxially grown on diamond substrate using microwave plasma-enhanced chemical vapor deposition. Then, BPFM thin films were deposited on the B-doped diamond layer by pulsed laser deposition. BPFM thin films were polycrystalline with random orientations on the B-doped diamond layer. Fabricated heterostructure showed saturated P-E hysteresis curves with 2P_r : 90℃/cm^2 and 2E_c : 740kV/cm for maximum electric field of 900kV/cm at room temperature. P-E hysteresis curves without influences of leakage current were observed even when the measurement temperature was increased to 200 ℃