Control of surface carrier of carbon materials by giant remnant polarization

众所周知，金刚石除了具有宽间隙半导体的优越性能外，还通过高浓度杂质的加入而形成超导性。针对该领域的未来发展和目前的失败，我建议使用铁电（Bi,Pr）（Fe,Mn）O3（BPFM）的巨大极化来控制表面载流子。我证实了金刚石与BPFM之间没有相互扩散的良好界面结构。此外，我还证明了BPFM具有良好的铁电性。另一方面，对于形成源极漏极的MFIS金刚石场效应管结构的运动特性，目前还没有发现该类金刚石沟道的漏极电流异常足以引起BPFM的自发极化，但认为可以通过对金刚石沟道的缺陷约束来改善这一点。

It is known to the diamond that superconductivity develops by highly-concentrated impurities addition in addition to the superior performance as the wide gap semiconductor. Aiming at the future development of the field concerned and the present defeat, I suggest surface carrier control using a huge polarization of ferroelectric (Bi,Pr)(Fe,Mn)O3(BPFM).I confirmed good interface structure without the interdiffusion between diamond, and BPFM. In addition, I showed good ferroelectricity of BPFM. On the other hand, about movement properties of the MFIS diamond FET structure that formed a source drain, enough abnormality of the drain electric current of the class of diamond channels for the spontaneous polarization of BPFM is not accomplished to date, but think that this can be improved by the defect restraint of the diamond channel.