Development of Low Temperature Bonding Technology for Glass and Polymer Substrates in Ambient Air for Future Three-Dimensional MEMS Packaging

开发环境空气中玻璃和聚合物基板的低温键合技术，用于未来三维 MEMS 封装

• 批准号: 21760269
• 负责人: SHIGETO Akitsu
• 金额: $ 2.91万
• 依托单位: National Institute for Materials Science
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Young Scientists (B)
• 财政年份: 2009
• 资助国家: 日本
• 起止时间: 2009 至 2010
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-21760269/
• 关键词: 低温大気圧接合; インターコネクト; 異種材料; 実装; XPS; TEM; 接合; 低温; 大気圧; MEMS; インターコネクション; 表面改質; 低温接合; 3次元実装; 大気圧接合

In this study, a homo/heterogeneous bonding technology for Cu, glass (including both SiO2 and quartz), and polyimide was realized at 150 oC in ambient air-like condition. In order to create a good bondability to these materials at the same time, a compatible bridging layer was created with the vapor-assisted surface activation method. In this, water vapor was introduced onto the atomically clean surfaces of materials and it helped create the adhesive aqueous compounds. The chemical structure and thickness of the bridging layers are tunable only with the number of water molecules colliding with the surface in unit area and time, which resulted in high binding energy on entire surface and good electric conduction at Cu-Cu interface at the same time. Moreover, a Cu bumpless substrate and a polyimide insulator was bonded to demonstrate high feasibility of this process.

在这项研究中，一个同质/异质铜，玻璃（包括二氧化硅和石英），聚酰亚胺键合技术实现了在150 ℃，在环境空气的条件。为了同时对这些材料产生良好的可结合性，用蒸气辅助表面活化方法产生相容的桥接层。在这种情况下，水蒸气被引入到材料的原子级清洁表面上，它有助于产生粘合剂水性化合物。桥接层的化学结构和厚度仅随单位面积和时间内与表面碰撞的水分子的数量而变化，从而使整个表面具有较高的结合能，同时使Cu-Cu界面具有良好的导电性。此外，铜无凸点基板和聚酰亚胺绝缘体的键合，以证明该工艺的高可行性。

项目成果

Room Temperature Wafer Bonding of Si and SiN by Nano-Adhesion Layer Method

纳米粘合层法室温晶圆键合 Si 和 SiN

• 期刊: アクセプト済み, Scripta Materialia.
• 作者: R.Kondou;C.Wang;A.Shigetou;T.Suga
• 通讯作者: T.Suga

Modified Diffusion Bonding for Both Cu and SiO2 at 150C in Ambient Air

150C 环境空气中 Cu 和 SiO2 的改良扩散键合

• 发表时间: 2010
• 作者: Akitsu Shigetou;Tadatomo Suga
• 通讯作者: Tadatomo Suga

Modified Diffusion Bonding of Chemical Mechanical Polishing (CMP)-Cu at 150C at Ambient Pressure

化学机械抛光 (CMP)-Cu 在 150C、环境压力下的改良扩散键合

• 发表时间: 2009
• 期刊: Applied Physics Express Vol.2, No.5
• 作者: A.Shigetou;T.Suga
• 通讯作者: T.Suga

Direct interconnection of chemical mechanical polishing (CMP)-Cu thin films at 150C in ambient air

环境空气中 150C 化学机械抛光 (CMP)-Cu 薄膜的直接互连

• 发表时间: 2009
• 作者: Akitsu Shigetou;T.Suga
• 通讯作者: T.Suga

Modified Diffusion Bond Process for Chemical Mechanical Polishing (CMP)-Cu at 150C in Ambient Air

化学机械抛光 (CMP)-Cu 在 150C 环境空气中的改良扩散键合工艺

• 发表时间: 2009
• 作者: Akitsu Shigetou;Tadatomo Suga
• 通讯作者: Tadatomo Suga