Development of cryogenic LSI based on an FD-SOI-CMOS technology for Terahertz high sensitive sensors

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I addressed development of analog integrated circuits which can operate around 2 Kelvin (K) to realize a large formatted high-sensitive image sensor in far-infrared wavelength region. In this study, I focused on a fully-depleted (FD) -SOI-CMOS process for this application and experimentally confirmed that the FD-SOI-CMOSs kept good static performance even at 2 K and that the noise performance was within an acceptable range for the application. Subsequently, I designed and fabricated basic circuits like operational amplifiers or flip-flops with the same process. These circuits worked as expected. These result mean that the technology to develop fundamental circuits has been established with the FD-SOI-CMOSs.