Control of interface magnetism of ultrathin film using magneto-electric effect

点击翻译按钮获取中文摘要

Interface magnetism and structure inα-Cr_2O_3/ferromagnetic thin film were investigated. It is fount that for a high perpendicular exchange bias, the similar in-plane atom arrangement between α-Cr_2O_3 and ferromagnetic layer and the crystalline quality ofα-Cr_2O_3were important. The perpendicular exchange bias of approximately 0.3 erg/cm^2was achieved which is a highest value among the reported values. On the basis of the obtained results, it was shown thatα-Cr_2O_3was a promising material for the rare-metal free non-volatile memory with low power consumption.