Control of interface magnetism of ultrathin film using magneto-electric effect

研究了α-Cr2O_3/铁磁薄膜的界面磁性和结构。结果表明，对于较高的垂直交换偏置，α-Cr_2O_3与铁磁层原子在面上的相似排列和α-Cr_2O_3的结晶质量是重要的。垂直交换偏置约为0.3erg/cm~2，是报告数值中的最高值。结果表明，α-Cr_2O_3是一种很有前途的低功耗无稀有金属非易失性存储器材料。

Interface magnetism and structure inα-Cr_2O_3/ferromagnetic thin film were investigated. It is fount that for a high perpendicular exchange bias, the similar in-plane atom arrangement between α-Cr_2O_3 and ferromagnetic layer and the crystalline quality ofα-Cr_2O_3were important. The perpendicular exchange bias of approximately 0.3 erg/cm^2was achieved which is a highest value among the reported values. On the basis of the obtained results, it was shown thatα-Cr_2O_3was a promising material for the rare-metal free non-volatile memory with low power consumption.