Study on fabricating entangled photon sources which are highly tolerant to the structural fluctuation

抑制精细结构分裂(FSS)的方法是：用砷化镓包埋控制纳米结构的各向异性，并用铟闪光法形成盘状纳米结构。实验结果表明，在优化工艺条件和制作量子盘结构后，FSS从100μeV降到了30μeV。此外，通过引入量子环结构，使FSS降低到低至5μeV。

Suppression of the fine structure splitting(FSS) was carried out by controlling anisotropy of nanostructures with GaAs embedding and forming disk-like nanostructure by Indium-flash method. It is found that after optimizing conditions for each process and fabricating quantum disk structure, the FSS has successfully reduced from 100μeV down to 30μeV. Furthermore, the FSS has reduced as low as 5μeV by introducing quantum ring structure.