Control of dielectric function by making nano-scale structure of IV-group semiconductor

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Based on the first-principles calculation and the EFED method, we studied (1) lowering of dielectric constant in IV semiconductor nano-structures, (2) physical property of IV semiconductor nano-structures with reduced dielectric constant, and (3) growth mechanism of IV semiconductor nano-structures toward the control of the dielectric constant. Based on the luminescence spectroscopy, we also studied (4) opto-electric measurement of impurities in IV semiconductor nano-structures, and (5) the effect of interface control for IV semiconductor nano-structures.