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Generation of Spin Current in Bipolar Conductors with Quasi-Zero Hall Coefficients

准零霍尔系数双极导体中自旋电流的产生

基本信息

批准号：
22360003
负责人：
SAKAI Masamichi
金额：
$ 12.73万
依托单位：
Saitama University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
2010
资助国家：
日本
起止时间：
2010 至 2012
项目状态：
已结题

项目摘要

The ordinary Hall effect (OHE), which is caused by an external magnetic field, was studied as a mechanism for the generation of spin current. It has been theoretically elucidated that, under an open-circuit condition, the OHE can contribute to spin-current generation when spin-polarized electrons and holes are simultaneously present as mobile carriers. This OHE contribution to spin current generation is caused by the steady-state kinematics of electrons and holes whose transverse velocities have the same direction. The experimental aspects of possible materials for the isomorphic electron and hole systems are argued on the basis of the experimental results of the magnetotransport measurements of the quasi-zero Hall coefficient (QZHC) conductors YH_2 and Gd_xY_<1-x>H_2. For experimental verification of spin current generation, we have investigated the influence of spin injection in these QZHC conductors by employing two type of Hall devices, the current channel region of which are (A) magneticmaterial Gd_xY_<1-x>H_2 (x≒0.4) and (B) nonmagnetic YH_2 but having Co source electrodes and a shortchannel length of approximately 10 μm. Huge anomalous Hall resistivity and positive transversemagnetoresistivity are observed in both Hall devices A and B, showing the generation of spin current.

研究了由外加磁场引起的普通霍尔效应（OHE）作为自旋电流产生的机理。从理论上说明，在开路条件下，当自旋极化电子和空穴同时作为移动载流子存在时，OHE有助于自旋电流的产生。这种OHE对自旋电流产生的贡献是由横向速度方向相同的电子和空穴的稳态运动学引起的。根据准零霍尔系数（QZHC）导体YH_2和Gd_xY_<1-x>H_2的磁输运测量结果，讨论了同构电子空穴系统可能材料的实验方面。为了实验验证自旋注入对QZHC导体产生电流的影响，我们采用两种霍尔器件，其电流通道区域分别为(A)磁性材料Gd_xY_<1-x>H_2 （x≒0.4）和(B)具有Co源电极且通道长度约为10 μm的非磁性YH_2。在霍尔器件A和B中均观察到巨大的异常霍尔电阻率和正横向磁电阻率，表明自旋电流的产生。

项目成果

期刊论文数量（0）

专著数量（0）

科研奖励数量（0）

会议论文数量（0）

专利数量（0）

スピン偏極度測定方法及び測定メ-タ, 並びにこれを用いた論理演算ゲート及び信号暗号復号化方法

自旋偏振测量方法和使用该方法的测量仪、逻辑运算门以及信号加密/解码方法

DOI：
发表时间：
2011
期刊：
影响因子：
0
作者：
通讯作者：

Appearance of a Correlation between the Hall Coefficient and Electrical Resistivity upon Dihydrogenation of Yttrium

钇二氢化时霍尔系数与电阻率之间相关性的出现

DOI：
10.1063/1.3500443
发表时间：
2010
期刊：
J. Appl. Phys
影响因子：
0
作者：
M. Sakai;D. Kodama;M. Ito;S. Ito;O.Nakamura;S. Hasegawa;A. Kitajima;A. Oshima
通讯作者：
A. Oshima

Hasegawa Enhancement of hydrogen uptake for Y and Gd films by thin Ni surface overlayers

长谷川通过薄镍表面覆盖层增强 Y 和 Gd 薄膜的氢吸收