In-depth profiling of non-radiative carrier recombination in the multi-junction solar cells by using the photothermal spectroscopy

利用光热光谱法深入分析多结太阳能电池中的非辐射载流子复合

• 批准号: 22360412
• 负责人: FUKUYAMA Atsuhiko
• 金额: $ 11.73万
• 依托单位: University of Miyazaki
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 2010
• 资助国家: 日本
• 起止时间: 2010-04-01 至 2014-03-31
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-22360412/
• 关键词: 多接合太陽電池; 量子井戸太陽電池; 熱エネルギー損失; 非発光再結合; 圧電素子光熱変換分光法; 熱エネルギー損失測定

Based on the signal generation and propagation principle of the photothermal spectroscopy, we have developed the in-depth profiling technique that detects the non-radiative recombination loss of photo-generated carriers in the multi-junction solar cells. After applying the frequency-dependent piezoelectric photothermal (PPT) measurements to the multi-quantum well (MQW) structure inserted p-i-n GaAs solar cells, we detected the PPT signals originating from MQWs even in the high frequency measuring conditions. When higher frequency, the PPT signals generated within the MQW region are expected to exponentially decrease because of decreasing the thermal diffusion length. Present experimental results show clearly that photo-generated carries in MQW can thermally escape and the carrier collection efficiency at room temperature is significantly improved.

基于光热光谱的信号产生和传播原理，我们发展了检测多结太阳电池中光生载流子非辐射复合损耗的深度剖析技术。将频率相关的压电光热(PPT)测量应用于多量子井(MQW)结构插入p-i-n GaAs太阳电池后，即使在高频测量条件下，我们也检测到来自MQW的PPT信号。当频率较高时，由于热扩散长度的减小，在MQW区域内产生的PPT信号预计将呈指数下降。目前的实验结果清楚地表明，MQW中的光生载流子可以热逃逸，室温下的载流子收集效率得到了显着提高。

项目成果

Determination of Exciton Binding Energy of GaInNAs Quantum Wells by a Piezoelectric Photo-thermal Spectroscopy comparing with a Photo-reflectance and a Photoluminescence Measurements

通过压电光热光谱法测定 GaInNAs 量子阱的激子结合能，并与光反射和光致发光测量进行比较

• 发表时间: 2010
• 作者: K.Kashima;A.Fukuyama;K.Sakai;H.Yokoyama;M.Kondow;T.Ikari
• 通讯作者: T.Ikari

Detection of Thermal Energy Loss of the photoexcited Carriers in Polycrystalline Silicon p-n Junction Interface Region by a Piezoelectric Photothermal Study

通过压电光热研究检测多晶硅 p-n 结界面区域光激发载流子的热能损失

• 发表时间: 2010
• 期刊: Proceedings of Symposium on Ultrasonic Electronics
• 作者: H.Tamura;A.Fukuyama;K.Sakai;T.Ikari
• 通讯作者: T.Ikari

Effect of internal electric field on non-radiative carrier recombination in strain-balanced InGaAs/GaAsP multiple quantum well solar cells

应变平衡InGaAs/GaAsP多量子阱太阳能电池内电场对非辐射载流子复合的影响

• 发表时间: 2014
• 期刊: Physica Status Solidi A
• 作者: Atsuhiko Fukuyama;Taketo Aihara;Yuki Yokoyama;Michiya Kojima;Hiromasa Fujii;Hidetoshi Suzuki;Masakazu Sugiyama;Yoshiaki Nakano;and Tetsuo Ikari
• 通讯作者: and Tetsuo Ikari

量子井戸太陽電池におけるキャリアの非発光再結合過程および輸送特性

量子阱太阳能电池中载流子的非辐射复合过程和输运特性

• 发表时间: 2012
• 作者: 石橋大輔;佐藤洋平;相原健人;藤井宏昌;杉山正和;中野義昭;福山敦彦;碇哲雄
• 通讯作者: 碇哲雄

InGaAs/GaAsP 歪補償量子井戸太陽電池中の光励起キャリア発光再結合過程の評価

InGaAs/GaAsP 应变补偿量子阱太阳能电池中光激发载流子辐射复合过程的评估

• 发表时间: 2012
• 作者: 小島慶也;中野陽介;相原健人;福山敦彦;碇哲雄;藤井宏昌;杉山正和;中野義昭
• 通讯作者: 中野義昭