Electronic Spectroscopy in Superconducting Diamond: Superconductivity and Disorder Effect near the Insulator Transition

为了研究无序对金属-绝缘体转变附近超导电性的影响，我们用电子能谱和扫描隧道显微镜观察了掺硼金刚石中的超导电子态。我们观察到了隧穿谱的硼浓度依赖性和局域态密度的空间变化。结果表明，硼掺杂不仅提高了载流子浓度，而且提高了无序密度。

We have performed electronic spectroscopy and observed superconducting electronic states in boron-doped diamond by using scanning tunneling microscope in order to study the effect of the disorder on the superconductivity near the metal-insulator transition. We have observed the boron concentration dependence of the tunneling spectra and the spatial variation of the local density of states. The results indicate that the boron doping enhances not only the carrier concentration but also the disorder density.