High quality Quantum Dots for 1.55 micron wavelength on GaAs substrate

GaAs 基板上 1.55 微米波长的高质量量子点

• 批准号: 22560016
• 负责人: SUGIMOTO Yoshimasa
• 金额: $ 2.75万
• 依托单位: National Institute for Materials Science
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 2010
• 资助国家: 日本
• 起止时间: 2010 至 2012
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-22560016/
• 关键词: エピタキシャル成長; 量子ドット(QD); MBE; 量子ドット; 二層積層法; 窒素添加; MBE成長; 窒素ドーピング; 近接2層構造; 1.55ミクロン発光波長

Extensions of emission wavelength of InAs/GaAs QDs by using bi-layer QD growth have been investigated. The extension has been found with an enlargement of the upper layer (active) QDs occurred by optimizing several growth parameters: growth temperature of lower (seed) QDs, amount of InAs supplied for seed- and active-QDs. These optimized parameters lowered the density of the seed-QDs strain spreading upward, which resulted in an enlargement of the active-QDs. We achieved a control of the extension of emission wavelength up to approximately 1.4 ・m. We also studied the growth of GaNAs/AlGaAs heterostructures on GaAs (100) substrates by plasma-assisted molecular beam epitaxy. By introducing periodic growth interruption and nitrogen (N) supply to the interrupted surfaces during the growth of GaNAs, we achieved high controllability of the average N concentration in GaNAs layers. We observed three-dimensional island growth of GaNAs on the N-rich surfaces.Extensions of emission wavelength of InAs/GaAs QDs by using bi-layer QD growth have been investigated. The extension has been found with an enlargement of the upper layer (active) QDs occurred by optimizing several growth parameters: growth temperature of lower (seed) QDs, amount of InAs supplied for seed- and active-QDs. These optimized parameters lowered the density of the seed-QDs strain spreading upward, which resulted in an enlargement of the active-QDs. We achieved a control of the extension of emission wavelength up to approximately 1.4 ・m. We also studied the growth of GaNAs/AlGaAs heterostructures on GaAs (100) substrates by plasma-assisted molecular beam epitaxy. By introducing periodic growth interruption and nitrogen (N) supply to the interrupted surfaces during the growth of GaNAs, we achieved high controllability of the average N concentration in GaNAs layers. We observed three-dimensional island growth of GaNAs on the N-rich surfaces.

本文研究了用双层量子点生长方法扩展InAs/GaAs量子点的发射波长。已经发现的扩展与上层（活性）量子点的扩大发生通过优化几个生长参数：生长温度较低（种子）量子点，提供的种子和活性量子点的InAs的量。这些优化的参数降低了种子量子点的密度，从而导致活性量子点的增大。我们实现了对发射波长扩展的控制，最高可达约1.4 μ m。我们还研究了用等离子体辅助分子束外延在GaAs（100）衬底上生长GaNAs/AlGaAs异质结。通过在GaNAs生长过程中引入周期性生长中断和向中断表面供应氮（N），我们实现了GaNAs层中平均N浓度的高度可控性。我们观察到GaNAs在富氮表面上的三维岛状生长，并研究了双层量子点生长对InAs/GaAs量子点发射波长的扩展。已经发现的扩展与上层（活性）量子点的扩大发生通过优化几个生长参数：生长温度较低（种子）量子点，提供的种子和活性量子点的InAs的量。这些优化的参数降低了种子量子点的密度，从而导致活性量子点的增大。我们实现了对发射波长扩展的控制，最高可达约1.4 μ m。我们还研究了用等离子体辅助分子束外延在GaAs（100）衬底上生长GaNAs/AlGaAs异质结。通过在GaNAs生长过程中引入周期性生长中断和向中断表面供应氮（N），我们实现了GaNAs层中平均N浓度的高度可控性。我们观察到三维岛生长的GaN富N表面上。

项目成果

Extending emission wavelength of InAs/GaAs quantum dots beyond 1.3 μm by using quantum dot bi-layer for broadband light source

• DOI: 10.1016/j.jcrysgro.2012.12.110
• 发表时间: 2013-09
• 期刊: Journal of Crystal Growth
• 影响因子: 1.8
• 作者: N. Ozaki;Y. Nakatani;S. Ohkouchi;N. Ikeda;Y. Sugimoto;K. Asakawa;E. Clarke;R. Hogg

周期的成長中断を用いたGaNAs三次元島状構造の作製

利用周期性生长中断制造 GaN 三维岛结构

• 发表时间: 2012
• 作者: 関野高明;ら
• 通讯作者: ら

近接二層積層によるGaAs基板上InAs-QDの発光長波長化の検討(II)

通过堆叠相邻两层来增加GaAs衬底上InAs-QDs发射波长的研究（二）

• 发表时间: 2013
• 作者: H.Ueda;T.Kanki;H.Tanaka;中谷擁平,尾崎信彦,大河内俊介,池田直樹,杉本喜正,Edmund Clarke,Richard Hogg
• 通讯作者: 中谷擁平,尾崎信彦,大河内俊介,池田直樹,杉本喜正,Edmund Clarke,Richard Hogg

窒素デルタドーピングを用いたGaNAs量子井戸の窒素濃度制御

使用氮δ掺杂控制 GaN 量子阱中的氮浓度

• 发表时间: 2011
• 作者: 間野高明;定昌史;黒田隆;M.Elborg;野田武司;杉本喜正;迫田和彰
• 通讯作者: 迫田和彰

AlAs中のN等電子中心

AlAs 中的 N 等电子中心

• 发表时间: 2012
• 作者: K.Iwai;M.Miyagi;Y.Shi;Y.Matsuura;定昌史
• 通讯作者: 定昌史