Observation of defects induced by non thermal equilibrium processes and their control used by microwave absorption of free carriers

研制了635和980 nm连续脉冲和多周期脉冲辐照下载流子密度和少子有效寿命τ eff的测量装置。在等离子体，激光加热处理，和基板切割的情况下，观察到使用的设备的τ_eff的下降。他们的分析得出结论，表面复合速度显著增加。高压水蒸气热处理、微波炉加热和非晶硅形成降低了载流子复合缺陷密度。

Equipments for measuring carrier density and minority carrier effective lifetime τ_eff induced by illumination with continuous and multiply-periodic pulses at 635 and 980 nm were developed. Decreases in τ_eff in the cases of plasma, laser heating treatment, and substrate cutting were observed using the equipments. Their analysis conclude marked increases in marked increase in the surface recombination velocity. Moreover, high pressure H_2O vapor heat treatment, microwave oven heating and amorphous silicon formation decreased the density of carrier recombination defects.