Observation of defects induced by non thermal equilibrium processes and their control used by microwave absorption of free carriers

研制了测量635 nm和980 nm连续脉冲和多周期脉冲照射下载流子密度和少数载流子有效寿命τ_eff的仪器。在等离子体、激光热处理和基材切割的情况下，τ_eff均有减小。他们的分析得出了表面复合速度显著增加的结论。高压H_2O蒸汽热处理、微波加热和非晶硅的形成降低了载流子复合缺陷的密度。

Equipments for measuring carrier density and minority carrier effective lifetime τ_eff induced by illumination with continuous and multiply-periodic pulses at 635 and 980 nm were developed. Decreases in τ_eff in the cases of plasma, laser heating treatment, and substrate cutting were observed using the equipments. Their analysis conclude marked increases in marked increase in the surface recombination velocity. Moreover, high pressure H_2O vapor heat treatment, microwave oven heating and amorphous silicon formation decreased the density of carrier recombination defects.