Observation of defects induced by non thermal equilibrium processes and their control used by microwave absorption of free carriers

非热平衡过程引起的缺陷的观察及其通过自由载流子微波吸收的控制

• 批准号: 22560292
• 负责人: SAMESHIMA Toshiyuki
• 金额: $ 2.83万
• 依托单位: Tokyo University of Agriculture and Technology
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 2010
• 资助国家: 日本
• 起止时间: 2010 至 2012
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-22560292/
• 关键词: 作製; 評価技術; マイクロ波フリーキャリヤ吸収; 少数キャリヤ実効ライフタイム; 高圧水蒸気熱処理; パッシベーション; 酸素プラズマ酸化膜; A10_x薄膜; AlOx薄膜; 光誘起フリーキャリヤ; マイクロ波吸収; キャリヤライフタイム; キャリヤ再結合; キャリヤ拡散; 水蒸気熱処理; レーザ加熱; ソーラーセル; キャリヤ再接合

Equipments for measuring carrier density and minority carrier effective lifetime τ_eff induced by illumination with continuous and multiply-periodic pulses at 635 and 980 nm were developed. Decreases in τ_eff in the cases of plasma, laser heating treatment, and substrate cutting were observed using the equipments. Their analysis conclude marked increases in marked increase in the surface recombination velocity. Moreover, high pressure H_2O vapor heat treatment, microwave oven heating and amorphous silicon formation decreased the density of carrier recombination defects.

研制了635和980 nm连续脉冲和多周期脉冲辐照下载流子密度和少子有效寿命τ eff的测量装置。在等离子体，激光加热处理，和基板切割的情况下，观察到使用的设备的τ_eff的下降。他们的分析得出结论，表面复合速度显著增加。高压水蒸气热处理、微波炉加热和非晶硅形成降低了载流子复合缺陷密度。

项目成果

Minority Carrier Annihilation in Lateral Direction Caused by Recombination Defects

复合缺陷引起的横向少数载流子湮灭

• DOI: 10.7567/jjap.52.041303
• 发表时间: 2013
• 期刊: Jpn. J. Appl. Phys
• 作者: T. Sameshima;T. Sameshima
• 通讯作者: T. Sameshima

Crystalline Silicon Solar Cells with Two Different Metals

两种不同金属的晶体硅太阳能电池

• DOI: 10.1143/jjap.49.110205
• 发表时间: 2010
• 期刊: Jpn. J. Appl. Phys
• 作者: T. SAMESHIMA;K. KOGURE;M. HASUMI
• 通讯作者: M. HASUMI

Passivation of Silicon Surfaces by Formation of Thin Silicon Oxide Films Formed by Combination of Induction-Coupled Remote Oxygen Plasma with High Pressure H 2 O Vapor Heat Treatment

通过感应耦合远程氧等离子体与高压 H 2 O 蒸气热处理相结合形成氧化硅薄膜来钝化硅表面

• DOI: 10.1557/opl.2012.863
• 发表时间: 2012
• 期刊: MRS Proceedings
• 作者: Hiroaki Abe;S. Yoshidomi;Y. Nagatomi;M. Hasumi;T. Sameshima
• 通讯作者: T. Sameshima

Passivation of silicon surface by laser rapid heating

激光快速加热钝化硅表面

• 作者: Toshiyuki Sameshima;Hiroshi Abe;Masahiko Hasumi;Tomohisa Mizuno;Naoki Sano
• 通讯作者: Naoki Sano

Increase in Minority Carrier Lifetime Measured by Microwave Irradiation Method

通过微波辐射法测量少数载流子寿命的增加

• 发表时间: 2012
• 作者: T. Sameshima;K. Betsuin;T. Nagao;and M. Hasumi
• 通讯作者: and M. Hasumi