Study on High-Temperature and High-Frequency Electronic Devices

制备了具有不同介电材料（如SiN、Al_2O_3、HfO_2和ZrO_2）的AlGaN/GaN MISHEMTs，用于稳定的高温工作。在室温下，ZrO_2/ al_2o_3双介质薄膜MISHEMT的栅漏电流为1 × 10^-10A/mm，比肖特基门控的AlGaN/GaN HEMT低约3个数量级。ZrO_2/ al_2o_3双介质膜MISHEMT在室温至300℃时栅漏电流的增加量是本研究制作的器件中最低的。这些结果表明，所提出的ZrO_2/ al_2o_3双介质膜MISHEMT有望在高温下降低栅漏电流。

AlGaN/GaN MISHEMTs with various dielectric materials, such as SiN, Al_2O_3, HfO_2, and ZrO_2, have been fabricated for stable high temperature operation. The ZrO_2/Al_2O_3dual dielectric film MISHEMT exhibited a gate leakage current of 1x10^-10A/mm at room temperature, which was about 3 orders of magnitude lower than that for the Schottky-gated AlGaN/GaN HEMT. The amount of increse in the gate leakage current from RT to 300 ℃ for the ZrO_2/Al_2O_3dual dielectric film MISHEMT was the lowest among devices fabricated in this work. These results indicate that the proposed ZrO_2/Al_2O_3dual dielectric film MISHEMT is promising for reducing the gate leakage current at high temperatures.