Theoretical study on an electric filed effect of magneto-crystalline anisotropy of Ferromagnetic-metal/Semiconductor interfaces

研究和讨论了Fe（13层）/GaAs（001）界面的磁晶各向异性。本工作的目的是在垂直磁化的非磁性半导体中设计高自旋极化的自旋注入器件。我们获得了垂直MCA的As和Ga终端。MCA能量为0。898 [mJ/m^2]（As终止）和0. 469 [mJ/m^2]用于Ga终止。但由于Fe层的退磁场能量很大，要在Fe/GaAs界面获得垂直磁化，需要厚度小于1 nm的Fe层。

We investigate and discuss the magneto-crystalline anisotropy (MCA)of Fe(13-layer)/GaAs(001)interface. Purpose of this work is theoretical design of the highly spin-polarized spin injection devices into the non-magnetic semiconductor with perpendicular magnetization. We obtained perpendicular MCA both for As and Ga terminations. MCA energies are 0. 898 [mJ/m^2] for As termination and 0. 469 [mJ/m^2] for Ga termination. However, due to the large demagnetizing filed energy of Fe-layer, the thin Fe-layer less than 1nm will be needed to obtain the perpendicular magnetization at the Fe/GaAs interface.